公开(公告)号：US20170153158A1

公开(公告)日：2017-06-01

申请号：US15355686

申请日：2016-11-18

Applicant: MEI-YEN LEE

Inventor： CHEN-CHIH FAN

IPC: G01L9/00 ,  B81C1/00

CPC classification number: G01L9/0073 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00238 ,  B81C2203/0792 ,  G01L9/008

Abstract: A micro feedback-chamber sensor comprises: a semiconductor base having a sensing circuit; a bonding structure layer disposed on the semiconductor base; and a sensing member chip having a low-resistance semiconductor body, a first end portion and a second end portion. The semiconductor body has free-standing Si posts, the first end portion is formed with a sensing member structure, the second end portion is connected to the semiconductor base through the bonding structure layer, and a micro feedback-chamber structure is formed between the sensing member structure, the semiconductor base and the semiconductor body. The sensing member structure is electrically connected to the sensing circuit through the free-standing Si posts. The sensing member structure and the micro feedback-chamber structure collaboratively react to an externally inputted physical signal to generate a sensing signal outputted to the sensing circuit. A method of manufacturing the micro feedback-chamber sensor is also provided.