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公开(公告)号：US11169039B2
公开(公告)日：2021-11-09
申请号：US16557213
申请日：2019-08-30
Applicant: Melexis Technologies NV
Inventor： Laurent Otte , Appolonius Jacobus Van Der Wiel , Jian Chen
Abstract: A pressure sensor device comprises a device package (110) arranged to define a cavity (116) having an opening for fluid communication with an internal volume thereof. The cavity (116) comprises a side wall (114, 115). An elongate pressure sensor element (100) is provided and has a proximal end (120) and a distal end (122). The side wall (114, 115) is arranged to hold fixedly the proximal end (120) of the pressure sensor element (100) therein so that the pressure sensor element (100) is cantilever-suspended from the side wall (114, 115) within the cavity (116).
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Patent Agency Ranking
公开(公告)号：US11515467B2
公开(公告)日：2022-11-29
申请号：US17111871
申请日：2020-12-04
Applicant: Melexis Technologies NV
Inventor： Appolonius Jacobus Van Der Wiel , Maliheh Ramezani , Cathleen Rooman , Laurent Otte , Johan Vergauwen
IPC: H01L41/113 , G01L1/18 , H01L41/047 , H01L41/053
Abstract: A piezo-resistor sensor includes a diffusion of a first conductivity type in a well of an opposite second type, contacts with islands in the diffusion, interconnects with the contacts, and a shield covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts. Each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, and each island is at a side covered by its interconnect. A guard ring of the second type is around the diffusion. The shield covers the well between the diffusion and the ring and the edge of the ring facing the diffusion. If a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.
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公开(公告)号：US10006822B2
公开(公告)日：2018-06-26
申请号：US15628758
申请日：2017-06-21
Applicant: MELEXIS TECHNOLOGIES NV
Inventor： Jian Chen , Laurent Otte
CPC classification number: G01L9/0055 , G01L9/0042 , G01L19/0069 , G01L19/0084 , G01L19/06 , G01L19/0627 , G01L19/143 , H01L29/84 , H01L2224/05554 , H01L2224/06 , H01L2224/48137 , H01L2224/48145 , H01L2224/48247 , H01L2224/48465 , H01L2924/181 , H01L2924/1815 , H01L2924/00012 , H01L2924/00
Abstract: A semiconductor sensor assembly for use in a corrosive environment comprises a processing device comprising at least one first bondpad of a material which may be corroded by a corrosive component in a corrosive environment; a sensor device comprising at least one second bondpad consisting of and/or being covered by a first corrosion resistant material; at least one bonding wire for making a signal connection between the at least one first bondpad of the processing device and the second bondpad of the sensor device. The processing device is partially overmoulded by a second corrosion resistant material, and is partially exposed to a cavity in the corrosion resistant material, with the sensor device being present in the cavity. A redistribution layer is provided to enable signal connection between the processing device and the sensor device is physically made in the cavity while the second corrosion resistant material covers the first bondpad.
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公开(公告)号：US11600559B2
公开(公告)日：2023-03-07
申请号：US16557224
申请日：2019-08-30
Applicant: Melexis Technologies NV
Inventor： Jian Chen , Appolonius Jacobus Van Der Wiel , Laurent Otte
Abstract: A method of manufacturing a sensor device (100) comprises providing (200) a package (102) having a first die-receiving subframe volume (104) separated from a second die-receiving subframe volume (106) by a partition wall (116). An elongate sensor element (120) is disposed (202) within the package (102) so as to bridge the first and second subframe volumes (104, 106) and to overlie the partition wall (116). The elongate sensor element (120) resides substantially in the first subframe volume (104) and partially in the second subframe volume (106). The elongate sensor element (120) is electrically connected within the second subframe volume (106).
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公开(公告)号：US10308502B2
公开(公告)日：2019-06-04
申请号：US15445096
申请日：2017-02-28
Applicant: MELEXIS TECHNOLOGIES NV
Inventor： Laurent Otte , Jian Chen , Appolonius Jacobus Van Der Wiel
Abstract: A semiconductor pressure sensor assembly for measuring a pressure of an exhaust gas which contains corrosive components, comprising: a first cavity, a pressure sensor comprising first bondpads for electrical interconnection, a CMOS chip comprising second bondpads for electrical interconnection with the pressure sensor, an interconnection module having electrically conductive paths connected via bonding wires to the pressure sensor and to the CMOS chip; the interconnection module being a substrate with corrosion-resistant metal tracks, wherein the CMOS chip and part of the interconnection module are encapsulated by a plastic package.
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公开(公告)号：US08969978B2
公开(公告)日：2015-03-03
申请号：US13870209
申请日：2013-04-25
Applicant: Melexis Technologies NV
Inventor： Laurent Otte , Appolonius Jacobus Van Der Wiel
CPC classification number: H01L29/84 , B81B2201/0264 , B81C1/00158 , G01L19/0069 , G01L19/0092 , G01L19/04 , G01L19/0627 , G01L19/141 , G01L19/143 , H01L2224/48091 , H01L2924/00014
Abstract: A pressure sensor system comprising a pressure sensor chip is disclosed. The pressure sensor chip comprises a sensing side where pressure sensing is performed and one or more interconnections where electrical connections are made at the other side of the chip. The pressure sensor comprising an integrated circuit (1) forming a substrate, the substrate comprising a membrane shaped portion adapted for being exposed to the pressure, the integrated circuit (1) comprising both pressure signal sensing components and pressure signal processing components.
Abstract translation: 公开了一种包括压力传感器芯片的压力传感器系统。 压力传感器芯片包括执行压力感测的感测侧和在芯片的另一侧进行电连接的一个或多个互连。 所述压力传感器包括形成衬底的集成电路（1），所述衬底包括适于暴露于所述压力的膜状部分，所述集成电路（1）包括压力信号感测部件和压力信号处理部件。
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