公开(公告)号：US20180197764A1

公开(公告)日：2018-07-12

申请号：US15741564

申请日：2016-07-01

Applicant: MITSUI CHEMICALS TOHCELLO, INC.

Inventor： Jun KAMADA ,  Noboru KAWASAKI ,  Shinichi USUGI ,  Makoto SUKEGAWA ,  Jin KINOSHITA ,  Kouji IGARASHI ,  Akimitsu MORIMOTO

IPC: H01L21/683 ,  H01L21/304 ,  H01L21/283 ,  C09J133/10

CPC classification number: H01L21/6836 ,  B32B27/00 ,  B32B27/30 ,  C09J7/30 ,  C09J133/068 ,  C09J133/10 ,  C09J133/12 ,  C09J201/02 ,  C09J2201/36 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2433/00 ,  C09J2463/00 ,  H01L21/283 ,  H01L21/304 ,  H01L21/67132 ,  H01L21/683 ,  H01L21/68757 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386

Abstract: This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G′bmin of the storage elastic modulus G′b in the range of 25° C. to less than 250° C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G′b250 at 250° C. of 0.005 MPa or above, and a temperature at which G′bmin is exhibited of 50-150° C. The adhesive surface layer C has a minimum value G′cmin of the storage elastic modulus G′c in the range of 25° C. to less than 250° C. of 0.03 MPa.