公开(公告)号：US20160141197A1

公开(公告)日：2016-05-19

申请号：US14891865

申请日：2014-05-22

Applicant: MITSUI CHEMICALS TOHCELLO, INC.

Inventor： Shinichi USUGI ,  Kouji IGARASHI ,  Akimitsu MORIMOTO

IPC: H01L21/683 ,  B32B43/00

CPC classification number: H01L21/6835 ,  B32B43/006 ,  C09J5/00 ,  C09J2203/326 ,  C09J2205/302 ,  C09J2205/31 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2221/68386

Abstract: Provided is a method of peeling an electronic member from a laminate composed of the electronic member adhered to a supporting substrate via an adhesive film having a self-peeling adhesive layer in a defined location and having an exposed region A. The method includes the steps of: reducing adhesive strength between the supporting substrate and the self-peeling adhesive layer in the region A by applying energy on the region A; removing the supporting substrate from the laminate by further applying energy on the region and thus further reducing the adhesive strength reduced in the prior step between the supporting substrate and the self-peeling adhesive layer from a starting point of the interface between the supporting substrate and the self-peeling adhesive layer; and peeling the electronic member from the laminate by removing the adhesive film from the electronic member.

Abstract translation: 本发明提供一种通过在规定位置具有自剥离粘合剂层并具有曝光区域A的粘合剂膜从由附着在支撑基板上的电子部件构成的层叠体剥离电子部件的方法。该方法包括以下步骤： ：通过在区域A上施加能量来降低区域A中的支撑基板和自剥离粘合剂层之间的粘合强度; 通过在该区域上进一步施加能量从层压板上去除支撑衬底，从而从支撑衬底和自剥离粘合剂层之间的界面的起点进一步降低在先前步骤中降低的粘合强度， 自剥胶层; 以及通过从电子部件去除粘合剂膜而从电子部件剥离电子部件。

公开(公告)号：US20180197764A1

公开(公告)日：2018-07-12

申请号：US15741564

申请日：2016-07-01

Applicant: MITSUI CHEMICALS TOHCELLO, INC.

Inventor： Jun KAMADA ,  Noboru KAWASAKI ,  Shinichi USUGI ,  Makoto SUKEGAWA ,  Jin KINOSHITA ,  Kouji IGARASHI ,  Akimitsu MORIMOTO

IPC: H01L21/683 ,  H01L21/304 ,  H01L21/283 ,  C09J133/10

CPC classification number: H01L21/6836 ,  B32B27/00 ,  B32B27/30 ,  C09J7/30 ,  C09J133/068 ,  C09J133/10 ,  C09J133/12 ,  C09J201/02 ,  C09J2201/36 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2433/00 ,  C09J2463/00 ,  H01L21/283 ,  H01L21/304 ,  H01L21/67132 ,  H01L21/683 ,  H01L21/68757 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386

Abstract: This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G′bmin of the storage elastic modulus G′b in the range of 25° C. to less than 250° C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G′b250 at 250° C. of 0.005 MPa or above, and a temperature at which G′bmin is exhibited of 50-150° C. The adhesive surface layer C has a minimum value G′cmin of the storage elastic modulus G′c in the range of 25° C. to less than 250° C. of 0.03 MPa.

公开(公告)号：US20160208144A1

公开(公告)日：2016-07-21

申请号：US14915587

申请日：2014-08-21

Applicant: MITSUI CHEMICALS TOHCELLO, INC.

Inventor： Shinichi USUGI ,  Kouji IGARASHI ,  Akimitsu MORIMOTO

IPC: C09J7/02 ,  H01L21/683 ,  H01L21/56

CPC classification number: C09J7/0285 ,  B32B3/085 ,  B32B7/12 ,  B32B25/12 ,  B32B25/18 ,  B32B27/06 ,  B32B27/08 ,  B32B27/18 ,  B32B27/281 ,  B32B27/34 ,  B32B27/36 ,  B32B2307/306 ,  B32B2307/736 ,  B32B2307/748 ,  B32B2405/00 ,  B32B2457/00 ,  B32B2457/14 ,  C09J7/20 ,  C09J7/255 ,  C09J7/385 ,  C09J201/00 ,  C09J2201/134 ,  C09J2201/606 ,  C09J2203/326 ,  C09J2433/00 ,  C09J2467/006 ,  C09J2477/006 ,  C09J2479/086 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/19 ,  H01L24/26 ,  H01L24/96 ,  H01L2221/68381 ,  H01L2224/12105 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00

Abstract: An adhesive film of the present invention includes a base material layer and a self-peeling adhesive layer laminated therein. The base material layer has a thermal contraction percentage in a direction of flow (thermal contraction percentage in an MD direction) and a thermal contraction percentage in an orthogonal direction with respect to the direction of flow (thermal contraction percentage in a TD direction) that satisfy the following conditions: (1) after heating at 150° C. for 30 minutes, 0.4≦|thermal contraction percentage in MD direction/thermal contraction percentage in TD direction|≦2.5 and average of thermal contraction percentage in MD direction and thermal contraction percentage in TD direction≦2%, and (2) after heating at 200° C. for 10 minutes, 0.4≦|thermal contraction percentage in MD direction/thermal contraction percentage in TD direction|≦2.5 and average of thermal contraction percentage in MD direction and thermal contraction percentage in TD direction≧3%.

Abstract translation: 本发明的粘合膜包括基材层和层叠在其中的自剥离粘合剂层。 基材层在流动方向（MD方向的热收缩率）和相对于流动方向（TD方向的热收缩率）的正交方向的热收缩率（在TD方向的热收缩率）满足时的热收缩率 满足以下条件：（1）在150℃加热30分钟后，在MD方向热收缩百分率/ TD方向的热收缩百分比＆gt;＆gt; 2.5和MD方向的热收缩率的平均值 在TD方向的收缩百分率＆nlE; 2％，（2）在200℃下加热10分钟后，0.4＆nlE; MD方向的热收缩率/ TD方向的热收缩率|＆nlE; 2.5和热收缩的平均值 MD方向的百分比和TD方向的热收缩百分比≧3％。