ASYMMETRICAL I/O STRUCTURE
    1.
    发明申请

    公开(公告)号:US20220060187A1

    公开(公告)日:2022-02-24

    申请号:US17406370

    申请日:2021-08-19

    Abstract: An asymmetrical I/O structure is provided. In one embodiment, the asymmetrical I/O structure comprises a first power supply node connected to a first voltage, a second power supply node connected to a second voltage, a pull-up unit and a pull-down unit which are connected between the first power supply node and the second power supply node. The first voltage is higher than the second voltage. A node between the pull-up unit and the pull-down unit is connected to an I/O node. The pull-up unit comprises one or more pull-up transistors, and the pull-down unit comprises one or more pull-down transistors. The number of the pull-up transistors is different from the number of the pull-down transistors.

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