Dielectric structure
    1.
    发明申请
    Dielectric structure 审中-公开
    电介质结构

    公开(公告)号:US20060022304A1

    公开(公告)日:2006-02-02

    申请号:US11191486

    申请日:2005-07-28

    Applicant: Maria Rzeznik

    Inventor: Maria Rzeznik

    Abstract: Dielectric structures particularly suitable for use in capacitors having a layer of a dielectric material including a dopant that provides a positive topography are disclosed. Methods of forming such dielectric structures are also disclosed. Such dielectric structures show increased adhesion of subsequently applied conductive layers.

    Abstract translation: 公开了特别适用于具有包括提供正形貌的掺杂剂的介电材料层的电容器中的电介质结构。 还公开了形成这种电介质结构的方法。 这种介电结构显示随后施加的导电层的附着力增加。

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