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公开(公告)号：US07728485B2
公开(公告)日：2010-06-01
申请号：US12130756
申请日：2008-05-30
Applicant: Martin Handtmann , Martin Franosch
Inventor： Martin Handtmann , Martin Franosch
IPC: H01L41/053 , H03H9/02 , H01L41/22 , H04R17/10 , C23F1/00
CPC classification number: H03H9/174 , H03H9/0207 , H03H9/02125 , H03H9/172 , H03H9/175 , H03H9/588 , H03H9/589 , Y10T29/42
Abstract: A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed.
Abstract translation: BAW器件包括具有表面区域的半导体衬底，形成在表面区域上的绝缘层和由第一和第二电极夹在中间的压电层，其中第二电极形成在绝缘层上。 执行表面区域，使得基板和第二电极之间的电容的电压依赖性被基本上抑制。
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公开(公告)号：US20080224297A1
公开(公告)日：2008-09-18
申请号：US11724603
申请日：2007-03-15
Applicant: Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
Inventor： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
CPC classification number: H03H9/02125 , H01L21/6835 , H01L23/3121 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/96 , H01L24/97 , H01L2221/68368 , H01L2224/0401 , H01L2224/11002 , H01L2224/16225 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/1421 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
Abstract: An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
Abstract translation: 一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。 一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点 所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。
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公开(公告)号：US20110042764A1
公开(公告)日：2011-02-24
申请号：US12938568
申请日：2010-11-03
Applicant: Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
Inventor： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
IPC: H01L29/84
CPC classification number: H03H9/02125 , H01L21/6835 , H01L23/3121 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/96 , H01L24/97 , H01L2221/68368 , H01L2224/0401 , H01L2224/11002 , H01L2224/16225 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/1421 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
Abstract: An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
Abstract translation: 一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。 一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点 所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。
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公开(公告)号：US08618621B2
公开(公告)日：2013-12-31
申请号：US12938568
申请日：2010-11-03
Applicant: Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
Inventor： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
IPC: H01L29/84
CPC classification number: H03H9/02125 , H01L21/6835 , H01L23/3121 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/96 , H01L24/97 , H01L2221/68368 , H01L2224/0401 , H01L2224/11002 , H01L2224/16225 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/1421 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
Abstract: An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
Abstract translation: 一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。 一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点 所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。
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公开(公告)号：US07851333B2
公开(公告)日：2010-12-14
申请号：US11724603
申请日：2007-03-15
Applicant: Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
Inventor： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
IPC: H01L21/00
CPC classification number: H03H9/02125 , H01L21/6835 , H01L23/3121 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/96 , H01L24/97 , H01L2221/68368 , H01L2224/0401 , H01L2224/11002 , H01L2224/16225 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/1421 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
Abstract: An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
Abstract translation: 一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。 一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点 所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。
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Patent Agency Ranking
公开(公告)号：US20090295506A1
公开(公告)日：2009-12-03
申请号：US12130756
申请日：2008-05-30
Applicant: Martin Handtmann , Martin Franosch
Inventor： Martin Handtmann , Martin Franosch
CPC classification number: H03H9/174 , H03H9/0207 , H03H9/02125 , H03H9/172 , H03H9/175 , H03H9/588 , H03H9/589 , Y10T29/42
Abstract: A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed.
Abstract translation: BAW器件包括具有表面区域的半导体衬底，形成在表面区域上的绝缘层和由第一和第二电极夹在中间的压电层，其中第二电极形成在绝缘层上。 执行表面区域，使得基板和第二电极之间的电容的电压依赖性被基本上抑制。
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7.发明授权公开(公告)号：US08102052B2
公开(公告)日：2012-01-24
申请号：US13026326
申请日：2011-02-14
Applicant: Herbert Schäfer , Martin Franosch , Thomas Meister , Josef Böck
Inventor： Herbert Schäfer , Martin Franosch , Thomas Meister , Josef Böck
CPC classification number: H01L21/02639 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02661
Abstract: One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics.
Abstract translation: 本发明的一个实施例涉及利用原位差分外延在半导体主体上同时沉积多个不同结晶结构的方法。 在本发明的一个实施方案中，形成制备表面，得到两个不同的结晶区域，单晶硅衬底区域和隔离层区域。 单晶硅层和非晶硅层同时直接分布在单晶硅衬底区域和隔离层区域的制备表面上。 沉积包括形成两个或更多个子层。 可以为每个单独的子层改变工艺参数以优化沉积特性。
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8.发明申请Concept for the wet-chemical removal of a sacrificial material in a material structure 审中-公开用于在材料结构中湿化学去除牺牲材料的概念公开(公告)号：US20060191868A1
公开(公告)日：2006-08-31
申请号：US11346605
申请日：2006-02-02
Applicant: Martin Franosch , Andreas Meckes , Klaus-Guenter Oppermann
Inventor： Martin Franosch , Andreas Meckes , Klaus-Guenter Oppermann
IPC: B44C1/22 , H01L21/302 , C23F1/00
CPC classification number: B81C1/00539 , B81B2203/0127
Abstract: In the inventive method for the wet-chemical removal of a sacrificial material in a material structure, there is first provided the material structure, wherein the material structure has a treatment region with the sacrificial material accessible through an opening. Subsequently, the sacrificial material is brought into contact with a wet-chemical treatment agent through the opening for the removal of the sacrificial material, wherein a mechanical vibration is generated in the wet-chemical treatment agent or in the wet-chemical treatment agent and the material structure during the contacting of the sacrificial material with the wet-chemical treatment agent.
Abstract translation: 在用于在材料结构中湿化学去除牺牲材料的本发明的方法中，首先提供材料结构，其中材料结构具有处理区域，其中牺牲材料可通过开口接近。 随后，牺牲材料通过用于去除牺牲材料的开口与湿化学处理剂接触，其中在湿化学处理剂或湿化学处理剂中产生机械振动， 在牺牲材料与湿化学处理剂接触期间的材料结构。
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公开(公告)号：US20050148205A1
公开(公告)日：2005-07-07
申请号：US10821798
申请日：2004-04-09
Applicant: Martin Franosch , Andreas Meckes , Klaus-Gunter Oppermann
Inventor： Martin Franosch , Andreas Meckes , Klaus-Gunter Oppermann
CPC classification number: B81C1/00333 , B81C2203/0136 , H03H3/02 , H03H3/08 , H03H9/105 , H03H9/1092 , Y10S156/93 , Y10S438/976 , Y10T29/49172 , Y10T29/49176 , Y10T29/4922 , Y10T29/49224 , Y10T29/49798 , Y10T156/1082 , Y10T156/11
Abstract: In a method for producing a protective cover for a device formed in a substrate, at first a sacrificial structure is produced on the substrate, wherein the sacrificial structure comprises a first portion covering a first area of the substrate including the device and a second portion extending from the first portion into a second area of the substrate including no device. Then a first cover layer is deposited that encloses the sacrificial structure such that the second portion of the sacrificial structure is at least partially exposed. Then the sacrificial structure is removed, and the structure formed by the removal of the sacrificial structure is closed.
Abstract translation: 在用于生产用于形成在衬底中的器件的保护罩的方法中，首先在衬底上产生牺牲结构，其中牺牲结构包括覆盖包括该器件的衬底的第一区域的第一部分和延伸 从第一部分到不包括器件的衬底的第二区域。 然后沉积包围牺牲结构的第一覆盖层，使得牺牲结构的第二部分至少部分地暴露。 然后去除牺牲结构，并且通过去除牺牲结构形成的结构是封闭的。
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公开(公告)号：US06548846B2
公开(公告)日：2003-04-15
申请号：US09734466
申请日：2000-12-11
Applicant: Hans Reisinger , Volker Lehmann , Reinhard Stengl , Hermann Wendt , Gerrit Lange , Harald Bachhofer , Martin Franosch , Herbert Schäfer
Inventor： Hans Reisinger , Volker Lehmann , Reinhard Stengl , Hermann Wendt , Gerrit Lange , Harald Bachhofer , Martin Franosch , Herbert Schäfer
IPC: H01L27108
CPC classification number: H01L27/1085 , H01L27/10805
Abstract: A storage capacitor for a DRAM has a dielectric composed of silicon nitride and has at least two electrodes disposed opposite one another across the dielectric. A material having a high tunneling barrier between the Fermi level of the material and the conduction band of the dielectric is used for the electrodes. Suitable materials for the electrodes are metals such as platinum, tungsten and iridium or silicides.
Abstract translation: 用于DRAM的存储电容器具有由氮化硅构成的电介质，并且在电介质上具有彼此相对设置的至少两个电极。 对于电极，使用在材料的费米能级和电介质的导带之间具有高隧道势垒的材料。 用于电极的合适材料是金属如铂，钨和铱或硅化物。
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