公开(公告)号：US4291985A

公开(公告)日：1981-09-29

申请号：US118307

申请日：1980-02-04

Applicant: Masatoshi Tsujimura

Inventor： Masatoshi Tsujimura

IPC: G01J3/08 ,  G01J3/51 ,  G01N21/47 ,  G01N21/27 ,  G01J3/50

CPC classification number: G01J3/08 ,  G01J3/0251 ,  G01J3/501 ,  G01J3/51 ,  G01N21/474

Abstract: A photometer comprising a light source, a rotating plate provided with a plurality of filter means having different wave lengths, a reference plate and a sample means, said rotating plate disposed between said light source and said reference plate and sample means, and a half-mirror and a reflection plate located between said light source and said rotating plate, said half-mirror and reflection plate being disposed so as to form a first light passage adapted to extend to the reference plate, and a second light passage adapted to extend to the sample means, whereby alternate radiation through one of said filter means against the reference plate and the sample means is made by the rotation of said rotary plate.

Abstract translation: 一种光度计，包括光源，设置有具有不同波长的多个滤光器装置的旋转板，参考板和采样装置，所述旋转板设置在所述光源和所述参考板和采样装置之间， 反射镜和位于所述光源和所述旋转板之间的反射板，所述半透半反镜和反射板被设置成形成适于延伸到参考板的第一光通道，以及适于延伸到所述第二光通路的第二光通路 通过所述旋转板的旋转，通过所述过滤器装置中的一个相对于参考板和样品装置的交替辐射来制造样品装置。

公开(公告)号：US09142411B2

公开(公告)日：2015-09-22

申请号：US14090424

申请日：2013-11-26

Applicant: Masatoshi Tsujimura ,  Hirokazu Fujiwara ,  Tomoo Morino ,  Narumasa Soejima

Inventor： Masatoshi Tsujimura ,  Hirokazu Fujiwara ,  Tomoo Morino ,  Narumasa Soejima

IPC: H01L21/00 ,  H01L21/04 ,  H01L21/673 ,  H01L29/16

CPC classification number: H01L21/046 ,  H01L21/67303 ,  H01L29/1608

Abstract: A method for producing a semiconductor device includes: an arranging process of arranging a plurality of silicon carbide wafers having opposed first and surfaces so that the first surface and the second surface of adjacent silicon carbide wafers face each other and are separated in parallel; and a heat treatment process of heating the arranged plurality of silicon carbide wafers so that the first surface of each silicon carbide wafer becomes higher in temperature than the second surface thereof, and, in the adjacent silicon carbide wafers, the second surface of one silicon carbide wafer becomes higher in temperature than the first surface of the other silicon carbide wafer that faces the second surface.

Abstract translation: 一种半导体器件的制造方法，其特征在于，包括：配置多个具有相对的第一面和表面的碳化硅晶片的布置处理，使得相邻碳化硅晶片的第一表面和第二表面彼此面对并且彼此平行分离; 以及加热配置的多个碳化硅晶片的热处理工序，使得碳化硅晶片的第一表面的温度比其第二表面变高，并且在相邻的碳化硅晶片中，一个碳化硅的第二表面 晶片的温度比面向第二表面的另一个碳化硅晶片的第一表面变得更高。