公开(公告)号：US10155843B2

公开(公告)日：2018-12-18

申请号：US15355267

申请日：2016-11-18

Applicant: Massachusetts Institute of Technology ,  Luxembourg Institute of Science and Technology

Inventor： Karen K. Gleason ,  Minghui Wang ,  Nicolas D. Boscher ,  Patrick Choquet

IPC: C08G61/12 ,  C23C16/505 ,  B05D1/00 ,  B01D69/12 ,  C01B3/50 ,  C08F34/00 ,  C08F134/00 ,  C08J5/22 ,  C08F234/00 ,  C09D145/00 ,  B01D53/22 ,  B01D67/00 ,  B01D69/14 ,  B01D71/00 ,  C01B21/04 ,  C01B13/02

Abstract: Described herein are facile, one-step initiated plasma enhanced chemical vapor deposition (iPECVD) methods of synthesizing hyper-thin (e.g., sub-100 nm) and flexible metal organic covalent network (MOCN) layers. As an example, the MOCN may be made from zinc tetraphenylporphyrin (ZnTPP) building units. When deposited on a membrane support, the MOCN layers demonstrate gas separation exceeding the upper bounds for multiple gas pairs while reducing the flux as compared to the support alone.

公开(公告)号：US10898861B2

公开(公告)日：2021-01-26

申请号：US16041169

申请日：2018-07-20

Applicant: Massachusetts Institute of Technology

Inventor： Minghui Wang ,  Karen K. Gleason ,  Peter Kovacik

IPC: B01D71/72 ,  B01D71/56 ,  B01D71/64 ,  B01D71/68 ,  B01D67/00 ,  C02F1/44 ,  B01D61/02 ,  B01D65/08 ,  C02F101/12

Abstract: Disclosed are methods of preparing antifouling coatings on reverse osmosis membranes with initiated vapor deposition or oxidative vapor deposition. The coatings enhance the stability and lifetime of membranes without sacrificing performance characteristics, such as permeability or salt retention.

公开(公告)号：US10510971B2

公开(公告)日：2019-12-17

申请号：US16038750

申请日：2018-07-18

Applicant: Massachusetts Institute of Technology

Inventor： Andong Liu ,  Karen K. Gleason ,  Minghui Wang

IPC: H01L51/05 ,  H01G11/04 ,  H01L51/00 ,  B05D1/00 ,  C08J5/18 ,  H01B1/12 ,  H01L21/02 ,  H01L49/02

Abstract: Described are materials and methods for fabricating low-voltage MHz ion-gel-gated thin film transistor devices using patternable defect-free ionic liquid gels. Ionic liquid gels made by the initiated chemical vapor deposition methods described herein exhibit a capacitance of about 1 μF cm−2 at about 1 MHz, and can be as thin as about 20 nm to about 400 nm.

公开(公告)号：US20190131554A1

公开(公告)日：2019-05-02

申请号：US16038750

申请日：2018-07-18

Applicant: Massachusetts Institute of Technology

Inventor： Andong Liu ,  Karen K. Gleason ,  Minghui Wang

IPC: H01L51/05 ,  B05D1/00 ,  H01B1/12 ,  H01L49/02 ,  H01L21/02 ,  C08J5/18 ,  H01L51/00

Abstract: Described are materials and methods for fabricating low-voltage MHz ion-gel-gated thin film transistor devices using patternable defect-free ionic liquid gels. Ionic liquid gels made by the initiated chemical vapor deposition methods described herein exhibit a capacitance of about 1 μF cm−2 at about 1 MHz, and can be as thin as about 20 nm to about 400 nm.

公开(公告)号：US20170158809A1

公开(公告)日：2017-06-08

申请号：US15355267

申请日：2016-11-18

Applicant: Massachusetts Institute of Technology

Inventor： Karen K. Gleason ,  Minghui Wang ,  Nicolas D. Boscher ,  Patrick Choquet

IPC: C08G61/12 ,  B05D1/00 ,  C23C16/505

CPC classification number: C08G61/124 ,  B01D53/228 ,  B01D67/0037 ,  B01D67/0072 ,  B01D69/127 ,  B01D69/148 ,  B01D71/00 ,  B01D2323/30 ,  B05D1/62 ,  C01B3/503 ,  C01B13/0255 ,  C01B21/04 ,  C01B21/0444 ,  C08F34/00 ,  C08F134/00 ,  C08F234/00 ,  C08G2261/228 ,  C08G2261/312 ,  C08G2261/3241 ,  C08G2261/37 ,  C08G2261/61 ,  C08J5/2231 ,  C08J7/047 ,  C08J2343/04 ,  C08J2445/00 ,  C09D145/00 ,  C23C16/505

Abstract: Described herein are facile, one-step initiated plasma enhanced chemical vapor deposition (iPECVD) methods of synthesizing hyper-thin (e.g., sub-100 nm) and flexible metal organic covalent network (MOCN) layers. As an example, the MOCN may be made from zinc tetraphenylporphyrin (ZnTPP) building units. When deposited on a membrane support, the MOCN layers demonstrate gas separation exceeding the upper bounds for multiple gas pairs while reducing the flux as compared to the support alone.