公开(公告)号：US20240136391A1

公开(公告)日：2024-04-25

申请号：US18047978

申请日：2022-10-18

Applicant: Micron Technology, Inc.

Inventor： Sanket S. Kelkar ,  Michael Mutch ,  Luca Fumagalli ,  Hisham Abdussamad Abbas ,  Brenda D. Kraus ,  Dojun Kim ,  Christopher W. Petz ,  Darwin Franseda Fan

IPC: H01L49/02 ,  H01G4/008 ,  H01G4/12 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/1218 ,  H01L27/10814 ,  H01L27/10852

Abstract: A microelectronic device comprises an access device comprising a source region and a drain region spaced from the source region, an insulative material vertically adjacent to the access device, and a capacitor within the insulative material and in electrical communication with the access device. The capacitor comprises a material comprising silicon oxynitride or titanium silicon nitride over surfaces of the insulative material, a first electrode comprising titanium nitride on the material, a dielectric material over the first electrode, and a second electrode on the dielectric material. Related methods of forming the microelectronic device and an electronic system including the microelectronic devices are also described.

公开(公告)号：US20240234482A9

公开(公告)日：2024-07-11

申请号：US18047978

申请日：2022-10-19

Applicant: Micron Technology, Inc.

Inventor： Sanket S. Kelkar ,  Michael Mutch ,  Luca Fumagalli ,  Hisham Abdussamad Abbas ,  Brenda D. Kraus ,  Dojun Kim ,  Christopher W. Petz ,  Darwin Franseda Fan

IPC: H01L49/02 ,  H01G4/008 ,  H01G4/12 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/1218 ,  H01L27/10814 ,  H01L27/10852

Abstract: A microelectronic device comprises an access device comprising a source region and a drain region spaced from the source region, an insulative material vertically adjacent to the access device, and a capacitor within the insulative material and in electrical communication with the access device. The capacitor comprises a material comprising silicon oxynitride or titanium silicon nitride over surfaces of the insulative material, a first electrode comprising titanium nitride on the material, a dielectric material over the first electrode, and a second electrode on the dielectric material. Related methods of forming the microelectronic device and an electronic system including the microelectronic devices are also described.