公开(公告)号：US20240431095A1

公开(公告)日：2024-12-26

申请号：US18733586

申请日：2024-06-04

Applicant: Micron Technology, Inc.

Inventor： Yoshitaka Nakamura ,  Ashwin Panday ,  Iche Huang ,  Richard Beeler ,  Dojun Kim ,  Lane T. Cunningham ,  Adriel Jebin Jacob Jebaraj ,  Scott E. Sills

IPC: H10B12/00

Abstract: Methods, apparatuses, and systems related to a three-dimensional semiconductor device having a doped liner at least disposed between a capacitor and an access device. The doped liner may be configured to provide dopants that diffuse into a semiconductor path of the access device and improve an electrical connection between the access device and the capacitor.

公开(公告)号：US12046658B2

公开(公告)日：2024-07-23

申请号：US16509204

申请日：2019-07-11

Applicant: Micron Technology, Inc.

Inventor： An-Jen B. Cheng ,  Brenda D. Kraus ,  Sanket S. Kelkar ,  Matthew N. Rocklein ,  Christopher W. Petz ,  Richard Beeler ,  Dojun Kim

IPC: H01G4/018 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H10B12/00 ,  H01G4/005

CPC classification number: H01L29/517 ,  H01G4/018 ,  H01L21/02156 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/28194 ,  H10B12/30 ,  H01G4/005 ,  H01L21/02164 ,  H01L21/02194

Abstract: Apparatuses, methods, and systems related to electrode formation are described. A first portion of a top electrode is formed over a dielectric material of a storage node. A metal oxide is formed over the first portion of the electrode. A second portion of the electrode is formed over the metal oxide.

公开(公告)号：US20240136391A1

公开(公告)日：2024-04-25

申请号：US18047978

申请日：2022-10-18

Applicant: Micron Technology, Inc.

Inventor： Sanket S. Kelkar ,  Michael Mutch ,  Luca Fumagalli ,  Hisham Abdussamad Abbas ,  Brenda D. Kraus ,  Dojun Kim ,  Christopher W. Petz ,  Darwin Franseda Fan

IPC: H01L49/02 ,  H01G4/008 ,  H01G4/12 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/1218 ,  H01L27/10814 ,  H01L27/10852

Abstract: A microelectronic device comprises an access device comprising a source region and a drain region spaced from the source region, an insulative material vertically adjacent to the access device, and a capacitor within the insulative material and in electrical communication with the access device. The capacitor comprises a material comprising silicon oxynitride or titanium silicon nitride over surfaces of the insulative material, a first electrode comprising titanium nitride on the material, a dielectric material over the first electrode, and a second electrode on the dielectric material. Related methods of forming the microelectronic device and an electronic system including the microelectronic devices are also described.

公开(公告)号：US11251261B2

公开(公告)日：2022-02-15

申请号：US16415487

申请日：2019-05-17

Applicant: Micron Technology, Inc.

Inventor： Sanket S Kelkar ,  An-Jen B. Cheng ,  Dojun Kim ,  Christopher W. Petz ,  Matthew N. Rocklein ,  Brenda D. Kraus

IPC: H01L27/108 ,  H01L21/768 ,  H01L49/02

Abstract: Methods, apparatuses, and systems related to forming a barrier material on an electrode are described. An example method includes forming a top electrode of a storage node on a dielectric material in a semiconductor fabrication sequence and forming, in-situ in a semiconductor fabrication apparatus, a barrier material on the top electrode to reduce damage to the dielectric material when ex-situ of the semiconductor fabrication apparatus.

公开(公告)号：US20210358919A1

公开(公告)日：2021-11-18

申请号：US16874260

申请日：2020-05-14

Applicant: Micron Technology, Inc.

Inventor： Dojun Kim ,  Sanket S. Kelkar ,  Christopher W. Petz ,  Anthony J. Kanago ,  Brenda D. Kraus ,  Soichi Sugiura

IPC: H01L27/108 ,  H01L29/49 ,  H01L21/28 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  C23C16/24

Abstract: Methods for forming microelectronic devices include forming a titanium nitride (TiN) material over a precursor structure. Forming the TiN material comprises repeating cycles of flowing a titanium-including gas adjacent the precursor structure; flowing a reducing gas over the precursor structure; flowing a nitrogen-including gas over the precursor structure; and, before and after flowing the nitrogen-including gas, purging gas. Related microelectronic device and related electronic systems are also described.

公开(公告)号：US20210013213A1

公开(公告)日：2021-01-14

申请号：US16504681

申请日：2019-07-08

Applicant: Micron Technology, Inc.

Inventor： Dojun Kim ,  Christopher W. Petz ,  Sanket S. Kelkar ,  Hidekazu Nobuto

IPC: H01L27/108 ,  G11C5/06

Abstract: An apparatus comprising a memory array comprising access lines. Each of the access lines comprises an insulating material adjacent a bottom surface and sidewalls of a base material, a first conductive material adjacent the insulating material, a second conductive material adjacent the first conductive material, and a barrier material between the first conductive material and the second conductive material. The barrier material is configured to suppress migration of reactive species from the second conductive material. Methods of forming the apparatus and electronic systems are also disclosed.

公开(公告)号：US20250159912A1

公开(公告)日：2025-05-15

申请号：US18909685

申请日：2024-10-08

Applicant: Micron Technology, Inc.

Inventor： Dojun Kim ,  Sanket S. Kelkar ,  An-Jen B. Cheng ,  Christopher W. Petz ,  Ryan J. Waskiewicz ,  Michael Mutch ,  Ashwin Panday ,  Sarah bull

IPC: H10D1/00 ,  H10D1/68

Abstract: An apparatus comprising one or more capacitors that comprise a bottom electrode, a high-k dielectric material, and a top electrode. The bottom electrode comprises an oxygen-doped titanium nitride material and one or more undoped titanium nitride materials. The oxygen-doped titanium nitride material is on sidewalls of the one or more undoped titanium nitride materials and the one or more undoped titanium nitride materials extending between sidewalls of the oxygen-doped titanium nitride material. Electronic devices and methods of forming an electronic device are also disclosed.

公开(公告)号：US20220028968A1

公开(公告)日：2022-01-27

申请号：US17498046

申请日：2021-10-11

Applicant: Micron Technology, Inc.

Inventor： Sanket S. Kelkar ,  Christopher W. Petz ,  Dojun Kim ,  Matthew N. Rocklein ,  Brenda D. Kraus

IPC: H01L49/02 ,  H01L21/285

Abstract: Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further includes forming a barrier material on the dielectric material to reduce oxygen vacancies in the dielectric material. The method further includes forming a top electrode on the barrier material.

公开(公告)号：US11145710B1

公开(公告)日：2021-10-12

申请号：US16913549

申请日：2020-06-26

Applicant: Micron Technology, Inc.

Inventor： Sanket S. Kelkar ,  Christopher W. Petz ,  Dojun Kim ,  Matthew N. Rocklein ,  Brenda D. Kraus

IPC: H01L21/8242 ,  H01L27/108 ,  H01L49/02 ,  H01L21/285

Abstract: Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further includes forming a barrier material on the dielectric material to reduce oxygen vacancies in the dielectric material. The method further includes forming a top electrode on the barrier material.

公开(公告)号：US20240234482A9

公开(公告)日：2024-07-11

申请号：US18047978

申请日：2022-10-19

Applicant: Micron Technology, Inc.

Inventor： Sanket S. Kelkar ,  Michael Mutch ,  Luca Fumagalli ,  Hisham Abdussamad Abbas ,  Brenda D. Kraus ,  Dojun Kim ,  Christopher W. Petz ,  Darwin Franseda Fan

IPC: H01L49/02 ,  H01G4/008 ,  H01G4/12 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/1218 ,  H01L27/10814 ,  H01L27/10852

Abstract: A microelectronic device comprises an access device comprising a source region and a drain region spaced from the source region, an insulative material vertically adjacent to the access device, and a capacitor within the insulative material and in electrical communication with the access device. The capacitor comprises a material comprising silicon oxynitride or titanium silicon nitride over surfaces of the insulative material, a first electrode comprising titanium nitride on the material, a dielectric material over the first electrode, and a second electrode on the dielectric material. Related methods of forming the microelectronic device and an electronic system including the microelectronic devices are also described.