公开(公告)号：US20020140020A1

公开(公告)日：2002-10-03

申请号：US10145435

申请日：2002-05-14

Applicant: Micron Technology, Inc.

Inventor： Zhiqiang Wu ,  Kunal Parekh ,  Li Li

IPC: H01L031/119 ,  H01L029/94 ,  H01L029/76 ,  H01L027/108

CPC classification number: H01L27/10852 ,  H01L28/82

Abstract: The present invention is directed to fabrication of a capacitor formed with a substantially concave shape and having optional folded or convoluted surfaces. The concave shape optimizes surface area within a small volume and thereby enables the capacitor to hold a significant charge so as to assist in increased miniaturization efforts in the microelectronic field. The capacitor is fabricated in microelectronic fashion consistent with a dense DRAM array. Methods of fabrication include stack building with storage nodes that extend above a semiconductor substrate surface.

公开(公告)号：US20020135011A1

公开(公告)日：2002-09-26

申请号：US10145250

申请日：2002-05-14

Applicant: Micron Technology, Inc.

Inventor： Zhiqiang Wu ,  Kunal Parekh ,  Li Li

IPC: H01L029/76

CPC classification number: H01L27/10852 ,  H01L28/82

Abstract: The present invention is directed to fabrication of a capacitor formed with a substantially concave shape and having optional folded or convoluted surfaces. The concave shape optimizes surface area within a small volume and thereby enables the capacitor to hold a significant charge so as to assist in increased miniaturization efforts in the microelectronic field. The capacitor is fabricated in microelectronic fashion consistent with a dense DRAM array. Methods of fabrication include stack building with storage nodes that extend above a semiconductor substrate surface.

Abstract translation: 本发明涉及一种电容器的制造，该电容器形成为具有大致凹入形状且具有可选择的折叠或回旋表面。 凹形形状在小体积内优化表面积，从而使电容器能够保持大量电荷，从而有助于微电子领域中的增加的小型化努力。 电容器以与电致密DRAM阵列一致的微电子方式制造。 制造方法包括具有在半导体衬底表面上方延伸的存储节点的堆叠构造。