公开(公告)号：US20030115970A1

公开(公告)日：2003-06-26

申请号：US10366822

申请日：2003-02-14

Applicant: Micron Technology, Inc.

Inventor： Tongbi Jiang ,  Zhiqiang Wu

IPC: G01L005/16

CPC classification number: G01L1/205

Abstract: A high-resolution pressure-sensing device is disclosed. The device includes an insulating flexible matrix having a plurality of filler particles. Application of a force to the matrix causes compression of the matrix. This results in the filler particles occupying a greater amount of space within the matrix relative to when no force is applied. A detector attached to the matrix detects or measures the volume of the filler particles relative to the volume of the matrix, and therefore determines the force applied to the matrix. Preferably, the resistivity of the matrix is inversely proportional to the volume percent of the filler particles, in which case the detector is a resistance-measuring circuit.

公开(公告)号：US20020163056A1

公开(公告)日：2002-11-07

申请号：US10188472

申请日：2002-07-02

Applicant: Micron Technology, Inc.

Inventor： Randhir P.S. Thakur ,  Kevin G. Donohoe ,  Zhiqiang Wu ,  Alan R. Reinberg

IPC: H01L029/00

CPC classification number: H01L21/32 ,  H01L21/0332

Abstract: Mechanical stress is diminished by forming an oxidation mask with silicon nitride having a graded silicon concentration. Grading is accomplished by changing the silicon content in the silicon nitride. The silicon nitride can be graded in a substantially linear or non-linear fashion. In one embodiment, the graded silicon nitride may be formed with one type of non-linear silicon grading, an abrupt junction. In other embodiments, the silicon nitride is formed in a variety of shapes fashioned during or after silicon nitride growth. In one embodiment, the stress is reduced by forming a polysilicon buffer layer between two silicon nitride layers. In another embodiment, stress is reduced by forming the silicon nitride on a pad layer, which in turn is formed on a base layer.

Abstract translation: 通过用具有梯度硅浓度的氮化硅形成氧化掩模来减小机械应力。 通过改变氮化硅中的硅含量来实现分级。 氮化硅可以以基本线性或非线性方式分级。 在一个实施例中，渐变氮化硅可以用一种类型的非线性硅分级，突变结形成。 在其它实施例中，氮化硅形成为在氮化硅生长期间或之后形成的各种形状。 在一个实施例中，通过在两个氮化硅层之间形成多晶硅缓冲层来减小应力。 在另一个实施例中，通过在衬底层上形成氮化硅来降低应力，衬底层又形成在基底层上。

公开(公告)号：US20010001084A1

公开(公告)日：2001-05-10

申请号：US09740751

申请日：2000-12-19

Applicant: Micron Technology, Inc.

Inventor： Tongbi Jiang ,  Zhiqiang Wu

IPC: H01R013/62

CPC classification number: H01R12/82 ,  H01R12/58 ,  H05K1/0271 ,  H05K1/112 ,  H05K3/28 ,  H05K3/3421 ,  H05K3/3436 ,  H05K3/3452 ,  H05K2201/0195 ,  H05K2201/068 ,  H05K2201/09472 ,  Y10S439/932

Abstract: A socket device for receiving a connection pin is disclosed, the socket device including a substrate having an upper surface. The socket device includes a connection pad disposed on the upper surface and a first layer disposed on the upper surface and on the connection pad. The first layer includes material having an overall positive coefficient of thermal expansion. The socket device includes a second layer disposed on the first layer. The second layer includes material having an overall negative coefficient of thermal expansion. The socket device also includes a contact hole formed in the first and second layers exposing a portion of the connection pad.

Abstract translation: 公开了一种用于接收连接销的插座装置，插座装置包括具有上表面的基板。 插座装置包括设置在上表面上的连接垫和设置在上表面上和连接垫上的第一层。 第一层包括具有总体正的热膨胀系数的材料。 插座装置包括设置在第一层上的第二层。 第二层包括具有总体负的热膨胀系数的材料。 插座装置还包括形成在第一和第二层中的接触孔，露出连接垫的一部分。

公开(公告)号：US20020140020A1

公开(公告)日：2002-10-03

申请号：US10145435

申请日：2002-05-14

Applicant: Micron Technology, Inc.

Inventor： Zhiqiang Wu ,  Kunal Parekh ,  Li Li

IPC: H01L031/119 ,  H01L029/94 ,  H01L029/76 ,  H01L027/108

CPC classification number: H01L27/10852 ,  H01L28/82

Abstract: The present invention is directed to fabrication of a capacitor formed with a substantially concave shape and having optional folded or convoluted surfaces. The concave shape optimizes surface area within a small volume and thereby enables the capacitor to hold a significant charge so as to assist in increased miniaturization efforts in the microelectronic field. The capacitor is fabricated in microelectronic fashion consistent with a dense DRAM array. Methods of fabrication include stack building with storage nodes that extend above a semiconductor substrate surface.

公开(公告)号：US20020135011A1

公开(公告)日：2002-09-26

申请号：US10145250

申请日：2002-05-14

Applicant: Micron Technology, Inc.

Inventor： Zhiqiang Wu ,  Kunal Parekh ,  Li Li

IPC: H01L029/76

CPC classification number: H01L27/10852 ,  H01L28/82

Abstract: The present invention is directed to fabrication of a capacitor formed with a substantially concave shape and having optional folded or convoluted surfaces. The concave shape optimizes surface area within a small volume and thereby enables the capacitor to hold a significant charge so as to assist in increased miniaturization efforts in the microelectronic field. The capacitor is fabricated in microelectronic fashion consistent with a dense DRAM array. Methods of fabrication include stack building with storage nodes that extend above a semiconductor substrate surface.

Abstract translation: 本发明涉及一种电容器的制造，该电容器形成为具有大致凹入形状且具有可选择的折叠或回旋表面。 凹形形状在小体积内优化表面积，从而使电容器能够保持大量电荷，从而有助于微电子领域中的增加的小型化努力。 电容器以与电致密DRAM阵列一致的微电子方式制造。 制造方法包括具有在半导体衬底表面上方延伸的存储节点的堆叠构造。

公开(公告)号：US20020096554A1

公开(公告)日：2002-07-25

申请号：US10020107

申请日：2001-12-07

Applicant: Micron Technology, Inc.

Inventor： Tongbi Jiang ,  Zhiqiang Wu

IPC: B23K001/06 ,  B23K005/20 ,  B23K020/10 ,  B23K031/02

CPC classification number: H01L24/85 ,  B23K20/004 ,  B23K2101/38 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/78301 ,  H01L2224/78347 ,  H01L2224/78822 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85206 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/20303 ,  H01L2924/20305 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00015

Abstract: A method and apparatus for creating second order vibrational modes. The apparatus includes a signal generator, a piezoelectric transducer, a plurality of wave propagating beams and reflecting boards. An electric field applied by the signal generator to the piezoelectric transducer induces a unidirectional vibration of the transducer. The vibration is propagated through the beams and reflected by the reflecting boards in a closed polygonal loop. The final reflection direction is perpendicular to the original vibration. A circular or elliptical vibration of the apparatus results. The circular or elliptical vibrational energy can be imparted to the wire bond of an integrated circuit to add strength to the connection.

Abstract translation: 一种用于创建二阶振动模式的方法和装置。 该装置包括信号发生器，压电换能器，多个波传播光束和反射板。 由信号发生器施加到压电换能器的电场引起换能器的单向振动。 振动通过光束传播并被反射板以闭合的多边形回路反射。 最终反射方向与原始振动垂直。 该装置产生圆形或椭圆形的振动。 可以将圆形或椭圆形振动能量赋予集成电路的引线键合，以增加连接的强度。