公开(公告)号：US20210202487A1

公开(公告)日：2021-07-01

申请号：US16729076

申请日：2019-12-27

Applicant: Micron Technology, Inc.

Inventor： Song Guo ,  Sanh D. Tang ,  Shen Hu ,  Yan Li ,  Nicholas R. Tapias

IPC: H01L27/108 ,  G11C11/408

Abstract: A method of forming an apparatus comprises forming pillar structures extending from a base material. Upper portions of the pillar structures may exhibit a lateral width that is relatively greater than a lateral width of lower portions of the pillar structures. The method also comprises forming access lines laterally adjacent to the lower portions of the pillar structures and forming digit lines above upper surfaces of the pillar structures. Memory devices and electronic systems are also described.

公开(公告)号：US20220059469A1

公开(公告)日：2022-02-24

申请号：US16999817

申请日：2020-08-21

Applicant: Micron Technology, Inc.

Inventor： Russell A. Benson ,  Davide Colombo ,  Yan Li ,  Terrence B. McDaniel ,  Vinay Nair ,  Silvia Borsari

IPC: H01L23/552 ,  H01L27/108

Abstract: A method of forming a microelectronic device comprises forming a conductive shielding material over a conductive shielding structure and a first dielectric structure horizontally adjacent the conductive shielding structure. A second dielectric structure is formed on first dielectric structure and horizontally adjacent the conductive shielding material. The conductive shielding material and the second dielectric structure are patterned to form fin structures extending in parallel in a first horizontal direction. Each of the fin structures comprises two dielectric end structures integral with remaining portions of the second dielectric structure, and an additional conductive shielding structure interposed between the two dielectric end structures in the first horizontal direction. Conductive lines are formed to extend in parallel in the first horizontal direction and to horizontally alternate with the fin structures in a second horizontal direction orthogonal to the first horizontal direction. Microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US12022647B2

公开(公告)日：2024-06-25

申请号：US17323516

申请日：2021-05-18

Applicant: Micron Technology, Inc.

Inventor： Stephen D. Snyder ,  Thomas A. Figura ,  Siva Naga Sandeep Chalamalasetty ,  Ping Chieh Chiang ,  Scott L. Light ,  Yashvi Singh ,  Yan Li ,  Song Guo

IPC: H10B12/00 ,  G11C5/06 ,  H01L27/06

CPC classification number: H10B12/482 ,  G11C5/06 ,  H01L27/0688 ,  H10B12/30 ,  H10B12/488

Abstract: A microelectronic device comprises memory cell structures extending from a base material. At least one memory cell structure of the memory cell structures comprises a central portion in contact with a digit line, extending from the base material and comprising opposing arcuate surfaces, an end portion in contact with a storage node contact on a side of the central portion, and an additional end portion in contact with an additional storage node contact on an opposite side of the central portion. Related microelectronic devices, electronic systems, and methods are also described.

公开(公告)号：US20220375942A1

公开(公告)日：2022-11-24

申请号：US17323516

申请日：2021-05-18

Applicant: Micron Technology, Inc.

Inventor： Stephen D. Snyder ,  Thomas A. Figura ,  Siva Naga Sandeep Chalamalasetty ,  Ping Chieh Chiang ,  Scott L. Light ,  Yashvi Singh ,  Yan Li ,  Song Guo

IPC: H01L27/108 ,  H01L27/06 ,  G11C5/06

Abstract: A microelectronic device comprises memory cell structures extending from a base material. At least one memory cell structure of the memory cell structures comprises a central portion in contact with a digit line, extending from the base material and comprising opposing arcuate surfaces, an end portion in contact with a storage node contact on a side of the central portion, and an additional end portion in contact with an additional storage node contact on an opposite side of the central portion. Related microelectronic devices, electronic systems, and methods are also described.

公开(公告)号：US20220102351A1

公开(公告)日：2022-03-31

申请号：US17643316

申请日：2021-12-08

Applicant: Micron Technology, Inc.

Inventor： Song Guo ,  Sanh D. Tang ,  Shen Hu ,  Yan Li ,  Nicholas R. Tapias

IPC: H01L27/108 ,  G11C11/408

Abstract: A method of forming an apparatus comprises forming pillar structures extending from a base material. Upper portions of the pillar structures may exhibit a lateral width that is relatively greater than a lateral width of lower portions of the pillar structures. The method also comprises forming access lines laterally adjacent to the lower portions of the pillar structures and forming digit lines above upper surfaces of the pillar structures. Memory devices and electronic systems are also described.

公开(公告)号：US11257766B1

公开(公告)日：2022-02-22

申请号：US16999817

申请日：2020-08-21

Applicant: Micron Technology, Inc.

Inventor： Russell A. Benson ,  Davide Colombo ,  Yan Li ,  Terrence B. McDaniel ,  Vinay Nair ,  Silvia Borsari

IPC: H01L23/552 ,  H01L27/108

Abstract: A method of forming a microelectronic device comprises forming a conductive shielding material over a conductive shielding structure and a first dielectric structure horizontally adjacent the conductive shielding structure. A second dielectric structure is formed on first dielectric structure and horizontally adjacent the conductive shielding material. The conductive shielding material and the second dielectric structure are patterned to form fin structures extending in parallel in a first horizontal direction. Each of the fin structures comprises two dielectric end structures integral with remaining portions of the second dielectric structure, and an additional conductive shielding structure interposed between the two dielectric end structures in the first horizontal direction. Conductive lines are formed to extend in parallel in the first horizontal direction and to horizontally alternate with the fin structures in a second horizontal direction orthogonal to the first horizontal direction. Microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US20220013527A1

公开(公告)日：2022-01-13

申请号：US16924995

申请日：2020-07-09

Applicant: Micron Technology, Inc.

Inventor： Yan Li ,  Song Guo ,  Mohd Kamran Akhtar ,  Alex J. Schrinsky

IPC: H01L27/108 ,  H01L21/3065

Abstract: A method of forming a microelectronic device structure comprises exposing a silicon structure to an etching chemistry at a first bias voltage of greater than about 500 V to form at least one initial trench between sidewalls of features formed in the silicon structure. The method also comprises exposing at least the sidewalls of the features to the etching chemistry at a second bias voltage of less than about 100 V to remove material from the sidewalls to expand the at least one initial trench and form at least one broader trench without substantially reducing a height of the features. Related apparatuses and electronic systems are also disclosed.

公开(公告)号：US20200243537A1

公开(公告)日：2020-07-30

申请号：US16259634

申请日：2019-01-28

Applicant: Micron Technology, Inc.

Inventor： Yan Li ,  Song Guo ,  Mohd Kamran Akhtar ,  Alex J. Schrinsky

IPC: H01L27/108 ,  H01G4/08 ,  H01G4/012 ,  H01G4/008

Abstract: Methods, apparatuses, and systems related to forming a trench using a polymerizing radical material. An example method includes depositing a polymerizing radical material in a number of trenches formed over a substrate. The method further includes etching a portion of the deposited polymerizing radical material from the number of trenches. The example method further includes selectively etching into one of the number of trenches below the deposited polymerizing radical material. The one of the number of trenches is narrower than another of the number of trenches.

公开(公告)号：US11925014B2

公开(公告)日：2024-03-05

申请号：US17643316

申请日：2021-12-08

Applicant: Micron Technology, Inc.

Inventor： Song Guo ,  Sanh D. Tang ,  Shen Hu ,  Yan Li ,  Nicholas R. Tapias

IPC: G11C11/24 ,  G11C11/408 ,  H10B12/00

CPC classification number: H10B12/312 ,  G11C11/4087 ,  H10B12/03 ,  H10B12/482 ,  H10B12/488

Abstract: A method of forming an apparatus comprises forming pillar structures extending from a base material. Upper portions of the pillar structures may exhibit a lateral width that is relatively greater than a lateral width of lower portions of the pillar structures. The method also comprises forming access lines laterally adjacent to the lower portions of the pillar structures and forming digit lines above upper surfaces of the pillar structures. Memory devices and electronic systems are also described.

公开(公告)号：US11877434B2

公开(公告)日：2024-01-16

申请号：US16924995

申请日：2020-07-09

Applicant: Micron Technology, Inc.

Inventor： Yan Li ,  Song Guo ,  Mohd Kamran Akhtar ,  Alex J. Schrinsky

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  H01L23/528 ,  H01L23/532 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/498 ,  H10B12/00 ,  H01L21/3065

CPC classification number: H10B12/053 ,  H01L21/3065 ,  H10B12/34

Abstract: A method of forming a microelectronic device structure comprises exposing a silicon structure to an etching chemistry at a first bias voltage of greater than about 500 V to form at least one initial trench between sidewalls of features formed in the silicon structure. The method also comprises exposing at least the sidewalls of the features to the etching chemistry at a second bias voltage of less than about 100 V to remove material from the sidewalls to expand the at least one initial trench and form at least one broader trench without substantially reducing a height of the features. Related apparatuses and electronic systems are also disclosed.