公开(公告)号：US20240045604A1

公开(公告)日：2024-02-08

申请号：US17879581

申请日：2022-08-02

Applicant: Micron Technology, Inc.

Inventor： Zhuo Chen ,  Beth R. Cook ,  Dale W. Collins ,  Muralikrishnan Balakrishnan

IPC: G06F3/06

CPC classification number: G06F3/0635 ,  G06F3/0604 ,  G06F3/0679

Abstract: Methods, systems, and devices for self-aligned techniques for forming connections in a memory device are described. A redistribution layer (RDL) for coupling an electrode of a capacitor of a memory cell with a corresponding selector device may be fabricated at a same time or stage as the electrode, using self-aligned techniques. When forming portions of a memory cell, a cavity for the electrode may be etched, and a portion of the RDL that extends from the electrode cavity to a corresponding selector device may also be selectively etched. The resulting cavities may be filled with an electrode material, which may form the electrode and couple the electrode to the corresponding selector device. The resulting memory device may support implementation of a staggered configuration for memory cells, and may include electrodes that share a crystalline structure with one or more corresponding portions of an RDL.

公开(公告)号：US20250063737A1

公开(公告)日：2025-02-20

申请号：US18753940

申请日：2024-06-25

Applicant: Micron Technology, Inc.

Inventor： Beth R. Cook ,  Zhuo Chen ,  Yixin Yan ,  Sarah P. Sredzinski ,  Gloria Y. Yang ,  Kathryn H. Russo

IPC: H10B53/30

Abstract: An electronic device comprises a memory array comprising access lines, data lines, and memory cells. Each memory cell is coupled to an associated access line and an associated data line and each memory cell comprises an access device, and a capacitor adjacent to the access device. The capacitor comprises a first electrode, a second electrode separated from the first electrode by an insulative material, and a leaker device adjacent to the first electrode. The second electrode and the leaker device extend through a lattice insulative material adjacent to the first electrode. The leaker device exhibits a substantially circular cross-sectional shape in a direction that is transverse to a direction in which the leaker device extends, with portions of the leaker device extending within a recessed region of the insulative material. Methods of forming electronic devices are also disclosed.

公开(公告)号：US11923272B2

公开(公告)日：2024-03-05

申请号：US17721919

申请日：2022-04-15

Applicant: Micron Technology, Inc.

Inventor： Zhuo Chen ,  Irina V. Vasilyeva ,  Darwin Franseda Fan ,  Kamal Kumar Muthukrishnan

IPC: H01L21/48 ,  H01L23/48 ,  H10B12/00 ,  H10B53/10 ,  H10B53/30 ,  H10B53/40

CPC classification number: H01L23/481 ,  H01L21/4814 ,  H10B12/0335 ,  H10B12/315 ,  H10B12/50 ,  H10B53/10 ,  H10B53/30 ,  H10B53/40

Abstract: Some embodiments include a method of forming an integrated assembly. Semiconductor material is patterned into a configuration which includes a set of first upwardly-projecting structures spaced from one another by first gaps, and a second upwardly-projecting structure spaced from the set by a second gap. The second gap is larger than the first gaps. Conductive material is formed along the first and second upwardly-projecting structures and within the first and second gaps. First and second segments of protective material are formed over regions of the conductive material within the second gap, and then an etch is utilized to pattern the conductive material into first conductive structures within the first gaps and into second conductive structures within the second gap. Some embodiments include integrated assemblies.

公开(公告)号：US20220310637A1

公开(公告)日：2022-09-29

申请号：US17216269

申请日：2021-03-29

Applicant: Micron Technology, Inc.

Inventor： Aaron Michael Lowe ,  Zhuo Chen ,  Marko Milojevic ,  Timothy A. Quick ,  Richard J. Hill ,  Scott E. Sills

IPC: H01L27/11514 ,  H01L27/108 ,  H01L27/12 ,  H01L27/13

Abstract: Some embodiments include an integrated transistor having an active region comprising semiconductor material. A conductive gating structure is adjacent to the active region. The conductive gating structure includes an inner region proximate the active region and includes an outer region distal from the active region. The inner region includes a first material containing titanium and nitrogen, and the outer region includes a metal-containing second material. The second material has a higher conductivity than the first material. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US11735672B2

公开(公告)日：2023-08-22

申请号：US17216269

申请日：2021-03-29

Applicant: Micron Technology, Inc.

Inventor： Aaron Michael Lowe ,  Zhuo Chen ,  Marko Milojevic ,  Timothy A. Quick ,  Richard J. Hill ,  Scott E. Sills

IPC: H01L29/786 ,  H01L27/13 ,  H01L27/12 ,  H10B53/20 ,  H10B12/00

CPC classification number: H01L29/78642 ,  H01L27/1203 ,  H01L27/13 ,  H10B12/05 ,  H10B12/31 ,  H10B53/20

Abstract: Some embodiments include an integrated transistor having an active region comprising semiconductor material. A conductive gating structure is adjacent to the active region. The conductive gating structure includes an inner region proximate the active region and includes an outer region distal from the active region. The inner region includes a first material containing titanium and nitrogen, and the outer region includes a metal-containing second material. The second material has a higher conductivity than the first material. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20220238417A1

公开(公告)日：2022-07-28

申请号：US17721919

申请日：2022-04-15

Applicant: Micron Technology, Inc.

Inventor： Zhuo Chen ,  Irina V. Vasilyeva ,  Darwin Franseda Fan ,  Kamal Kumar Muthukrishnan

IPC: H01L23/48 ,  H01L27/108 ,  H01L27/11504 ,  H01L21/48 ,  H01L27/11507 ,  H01L27/11509

Abstract: Some embodiments include a method of forming an integrated assembly. Semiconductor material is patterned into a configuration which includes a set of first upwardly-projecting structures spaced from one another by first gaps, and a second upwardly-projecting structure spaced from the set by a second gap. The second gap is larger than the first gaps. Conductive material is formed along the first and second upwardly-projecting structures and within the first and second gaps. First and second segments of protective material are formed over regions of the conductive material within the second gap, and then an etch is utilized to pattern the conductive material into first conductive structures within the first gaps and into second conductive structures within the second gap. Some embodiments include integrated assemblies.

公开(公告)号：US11335626B2

公开(公告)日：2022-05-17

申请号：US17021793

申请日：2020-09-15

Applicant: Micron Technology, Inc.

Inventor： Zhuo Chen ,  Irina V. Vasilyeva ,  Darwin Franseda Fan ,  Kamal Kumar Muthukrishnan

IPC: H01L23/48 ,  H01L27/108 ,  H01L27/11504 ,  H01L21/48 ,  H01L27/11507 ,  H01L27/11509

Abstract: Some embodiments include a method of forming an integrated assembly. Semiconductor material is patterned into a configuration which includes a set of first upwardly-projecting structures spaced from one another by first gaps, and a second upwardly-projecting structure spaced from the set by a second gap. The second gap is larger than the first gaps. Conductive material is formed along the first and second upwardly-projecting structures and within the first and second gaps. First and second segments of protective material are formed over regions of the conductive material within the second gap, and then an etch is utilized to pattern the conductive material into first conductive structures within the first gaps and into second conductive structures within the second gap. Some embodiments include integrated assemblies.

公开(公告)号：US20220084906A1

公开(公告)日：2022-03-17

申请号：US17021793

申请日：2020-09-15

Applicant: Micron Technology, Inc.

Inventor： Zhuo Chen ,  Irina V. Vasilyeva ,  Darwin Franseda Fan ,  Kamal Kumar Muthukrishnan

IPC: H01L23/48 ,  H01L27/108 ,  H01L27/11504 ,  H01L27/11509 ,  H01L27/11507 ,  H01L21/48

Abstract: Some embodiments include a method of forming an integrated assembly. Semiconductor material is patterned into a configuration which includes a set of first upwardly-projecting structures spaced from one another by first gaps, and a second upwardly-projecting structure spaced from the set by a second gap. The second gap is larger than the first gaps. Conductive material is formed along the first and second upwardly-projecting structures and within the first and second gaps. First and second segments of protective material are formed over regions of the conductive material within the second gap, and then an etch is utilized to pattern the conductive material into first conductive structures within the first gaps and into second conductive structures within the second gap. Some embodiments include integrated assemblies.