公开(公告)号：US20190160785A1

公开(公告)日：2019-05-30

申请号：US16312054

申请日：2017-06-26

Applicant: NAMICS CORPORATION

Inventor： Fumikazu KOMATSU ,  Issei AOKI ,  Junya SATO ,  Hiroshi TAKASUGI ,  Shin TERAKI

IPC: B32B15/092 ,  B32B27/20 ,  B32B27/26 ,  C08J5/18 ,  C08K3/22 ,  C08K3/38

Abstract: Provided is a resin composition for a film, which is used for producing the film having excellent insulating properties and thermal conductivity. The provided resin composition for the film contains a thermosetting resin (A) and hexagonal boron nitride secondary agglomerated particles (B). Here, the hexagonal boron nitride secondary agglomerated particles (B) contains hexagonal boron nitride secondary agglomerated particles (B-1) having a cohesive breaking strength of 7 MPa or more and hexagonal boron nitride secondary agglomerated particles (B-2) having a cohesive breaking strength of 3 MPa or more and less than 7 MPa.

公开(公告)号：US20240360310A1

公开(公告)日：2024-10-31

申请号：US18689720

申请日：2022-09-15

Applicant: NAMICS CORPORATION

Inventor： Hirotatsu IKARASHI ,  Masaki YOSHIDA ,  Toshiyuki SATO ,  Shin TERAKI

IPC: C08L71/12 ,  C08L53/02 ,  H01L23/29

CPC classification number: C08L71/126 ,  C08L53/02 ,  H01L23/293 ,  C08L2203/206

Abstract: Provided are a resin composition for a semiconductor device of a wafer level chip size package type, which exhibits excellent high-frequency properties, and can form a coating film which has a thickness that has less unevenness, and is unlikely to cause warpage of the semiconductor substrate, a semiconductor device using the same, and a method for producing a semiconductor device. A resin composition for a semiconductor device of a wafer level chip size package type, the resin composition comprising (A) a modified polyphenylene ether resin having an unsaturated double bond at the end thereof, (B) an elastomer having a butadiene skeleton, and optionally (C) a solvent, a semiconductor device using the same, and a method for producing a semiconductor device.