公开(公告)号：US20160079454A1

公开(公告)日：2016-03-17

申请号：US14888786

申请日：2014-04-30

Applicant: NEXCIS

Inventor： Cedric Broussillou ,  Sylvie Bodnar

IPC: H01L31/032 ,  H01L21/677 ,  F27D7/06 ,  H01L31/036 ,  F27B9/10 ,  H01L31/18 ,  H01L21/67

CPC classification number: H01L31/0322 ,  F27B9/10 ,  F27D7/06 ,  F27D2007/063 ,  F27D2019/0093 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/677 ,  H01L31/036 ,  H01L31/18

Abstract: A process for forming a semiconductor layer, especially with a view to photovoltaic applications, and more particularly to a process for forming a semiconductor layer of I-III-VI2 type by heat treatment and chalcogenization of a metallic precursor of I-III type, the process comprising: a heating step under an inert atmosphere during which the temperature increases uniformly up to a first temperature of between 460° C. and 540° C., in order to enable the densification of the metallic precursor, and a chalcogenization step beginning at said first temperature and during which the temperature continues to increase up to a second temperature, a stabilization temperature, of between 550° C. and 600° C., in order to enable the formation of the semiconductor layer. The formation of a semiconductor layer, or equivalently of an absorber, having a gain in conversion efficiency of around 4%, is thus advantageously achieved.

Abstract translation: 一种用于形成半导体层的方法，特别是考虑到光伏应用，更具体地涉及通过I-III型金属前体的热处理和硫属化形成I-III-VI2型半导体层的方法， 方法包括：在惰性气氛下的加热步骤，其中温度均匀升高至460℃至540℃之间的第一温度，以便使金属前体致密化，以及从 所述第一温度在550℃至600℃之间，其中温度继续升高至第二温度，稳定温度，以便能够形成半导体层。 因此有利地实现了具有约4％的转换效率增益的半导体层或等效于吸收体的形成。