公开(公告)号：US20140370328A1

公开(公告)日：2014-12-18

申请号：US14012992

申请日：2013-08-28

Applicant: National Taiwan University of Science and Technology

Inventor： Jinn Chu ,  I Made Wahyu Diyatmika ,  Yee-Wen Yen ,  Wen-Zhi Chang

IPC: B32B15/01

CPC classification number: B32B15/01 ,  B32B15/013 ,  B32B15/018 ,  C22C45/10 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12722

Abstract: The present invention relates to a tin whisker mitigation material using thin film metallic glass underlayer, which is a thin film metallic glass (TFMG) formed between a metal substrate and a tin layer. Particularly, the TFMG can be a Zr46Ti26Ni28 underlayer or a Zr51.7Cu32.3Al9Ni underlayer, capable of blocking off the interaction occurring in the interface of a copper layer (the metal substrate) and the tin layer, so as to carry out the inhibition of tin whisker growth. Moreover, a variety of experiment data are proposed for proving that the TFMG of the Zr46Ti26Ni28 or the Zr51.7Cu32.3Al9Ni can indeed be used to replace the conventionally used thick tin layer for being the underlayer between the copper layer (the metal substrate) and the tin layer, and then effectively inhibit the interaction occurring in the Cu/Sn interface and the growth of tin whisker by low manufacturing cost way.

Abstract translation: 本发明涉及一种使用薄膜金属玻璃底层的锡晶须缓释材料，其是在金属基底和锡层之间形成的薄膜金属玻璃（TFMG）。 特别地，TFMG可以是Zr46Ti26Ni28底层或Zr51.7Cu32.3Al9Ni底层，能够阻止在铜层（金属基板）和锡层的界面中发生的相互作用，从而进行抑制 锡晶须生长。 此外，提出了各种实验数据，证明了Zr46Ti26Ni28或Zr51.7Cu32.3Al9Ni的TFMG确实可以用于代替常规使用的厚锡层作为铜层（金属基板）和 锡层，然后以低制造成本的方式有效地抑制Cu / Sn界面中发生的相互作用和锡晶须的生长。

公开(公告)号：US09233521B2

公开(公告)日：2016-01-12

申请号：US14012992

申请日：2013-08-28

Applicant: National Taiwan University of Science and Technology

Inventor： Jinn Chu ,  I Made Wahyu Diyatmika ,  Yee-Wen Yen ,  Wen-Zhi Chang

IPC: B32B15/00 ,  B32B15/01 ,  C22C45/10

CPC classification number: B32B15/01 ,  B32B15/013 ,  B32B15/018 ,  C22C45/10 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12722

Abstract: The present invention relates to a tin whisker mitigation material using thin film metallic glass underlayer, which is a thin film metallic glass (TFMG) formed between a metal substrate and a tin layer. Particularly, the TFMG can be a Zr46Ti26Ni28 underlayer or a Zr51.7Cu32.3Al9Ni underlayer, capable of blocking off the interaction occurring in the interface of a copper layer (the metal substrate) and the tin layer, so as to carry out the inhibition of tin whisker growth. Moreover, a variety of experiment data are proposed for proving that the TFMG of the Zr46Ti26Ni28 or the Zr51.7Cu32.3Al9Ni can indeed be used to replace the conventionally used thick tin layer for being the underlayer between the copper layer (the metal substrate) and the tin layer, and then effectively inhibit the interaction occurring in the Cu/Sn interface and the growth of tin whisker by low manufacturing cost way.

Abstract translation: 本发明涉及一种使用薄膜金属玻璃底层的锡晶须缓释材料，其是在金属基底和锡层之间形成的薄膜金属玻璃（TFMG）。 特别地，TFMG可以是Zr46Ti26Ni28底层或Zr51.7Cu32.3Al9Ni底层，能够阻止在铜层（金属基板）和锡层的界面中发生的相互作用，从而进行抑制 锡晶须生长。 此外，提出了各种实验数据，证明了Zr46Ti26Ni28或Zr51.7Cu32.3Al9Ni的TFMG确实可以用于代替常规使用的厚锡层作为铜层（金属基板）和 锡层，然后以低制造成本的方式有效地抑制Cu / Sn界面中发生的相互作用和锡晶须的生长。

公开(公告)号：US09006699B2

公开(公告)日：2015-04-14

申请号：US13850860

申请日：2013-03-26

Applicant: National Taiwan University of Science and Technology

Inventor： Jinn Chu ,  Berhanu Tulu Kacha ,  Wen-Zhi Chang

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1625

Abstract: The present invention relates to a resistive random access memory using amorphous metallic glass oxide as a storage medium, comprising a substrate, an insulation layer, a first electrode layer, a resistive memory layer, and a second electrode layer. In the present invention, an amorphous metallic glass oxide layer is mainly used as the resistive memory layer of the resistive random access memory. Therefore, the resistive random access memory with storage medium of amorphous metallic glass oxide thin film having advantages of low operation voltage, low power consumption, and high set/reset resistance ratio are provided without using any thermal annealing processes or forming processes.

Abstract translation: 本发明涉及使用无定形金属玻璃氧化物作为存储介质的电阻随机存取存储器，其包括衬底，绝缘层，第一电极层，电阻存储层和第二电极层。 在本发明中，非晶金属玻璃氧化物层主要用作电阻式随机存取存储器的电阻性存储层。 因此，提供具有低操作电压，低功耗和高设定/复位电阻比优点的非晶金属玻璃氧化物薄膜的存储介质的电阻随机存取存储器，而不使用任何热退火工艺或成形工艺。