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公开(公告)号:US20230302470A1
公开(公告)日:2023-09-28
申请号:US17701401
申请日:2022-03-22
Applicant: None
Inventor: None
Abstract: An electrostatic sprayer operable at high flow rates and low pressures particularly suitable for spray drying. The sprayer includes an elongated body having a downstream spray nozzle assembly through which electrically charged liquid is directed via a central feed tube within the nozzle body and atomizing air is supplied via an annular passage about the liquid feed tube. In one embodiment, the nozzle assembly is an external mix cluster head spray nozzle assembly having a plurality of circumferentially spaced metallic spray tips. In another embodiment, the spray nozzle is an internal mix nozzle assembly having a spray tip with an internal mixing chamber for atomizing liquid prior to discharge.
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公开(公告)号:US20240018935A1
公开(公告)日:2024-01-18
申请号:US18213872
申请日:2023-08-10
Applicant: None
Inventor: None
IPC: F03B17/06
CPC classification number: F03B17/061 , F05B2240/97
Abstract: A hydroelectric power generation system includes a turbine assembly configured to be submerged under water and adapted to reciprocate in a vertical direction. The turbine assembly includes a turbine impeller having a plurality of blades configured to rotate about a central axis, and a turbine casing arranged surrounding the turbine impeller. The hydroelectric power generation system further includes a generator operatively coupled to the turbine impeller and a prime mover operatively coupling the turbine impeller to the generator. The turbine assembly is configured to slide relative to the prime mover in the vertical direction. The system further includes a displacement mechanism to move the turbine assembly in the vertical direction between a first position and a second position. The turbine impeller rotates in response to the vertical movement of the turbine inside the water, causing the rotation of the prime mover to operate the generator to generate electricity.
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公开(公告)号:US20170365679A1
公开(公告)日:2017-12-21
申请号:US15693874
申请日:2017-09-01
Applicant: None
Inventor: None
IPC: H01L29/49 , H01L21/8238 , H01L29/78 , H01L29/66 , H01L29/51
CPC classification number: H01L29/4983 , H01L21/823842 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/7833
Abstract: A semiconductor device includes a substrate and a gate dielectric layer on the substrate. The gate dielectric layer includes a single metal oxide layer. The semiconductor device includes a gate electrode stack on the gate dielectric layer. The gate electrode stack includes a metal filling line. The gate electrode stack includes a work function layer covering the sidewall and the bottom surface of the metal filling line. The gate electrode stack includes a capping layer in contact with the gate dielectric layer between sidewalls of the gate dielectric layer and sidewalls of the work function layer. The capping layer includes TaC and at least one of TiN or TaN. The gate electrode stack includes a barrier layer interposed between the capping layer and the sidewalls of the work function layer. The barrier layer comprises TaC and WN, and the barrier layer is in contact with the capping layer.
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