公开(公告)号：US20150243826A1

公开(公告)日：2015-08-27

申请号：US14423636

申请日：2013-08-27

Applicant: Northeastern University

Inventor： Xiaohong An ,  Fangze Liu ,  Swastik Kar

IPC: H01L31/112 ,  H01L31/18 ,  H01L31/028

CPC classification number: H01L31/112 ,  H01L31/028 ,  H01L31/109 ,  H01L31/1804

Abstract: Provided in one embodiment is a method for operating a photodiode device, which device comprises: at least one layer of an n-doped semiconductor material; two portions of a dielectric material separately disposed over separate regions of the at least one layer of the n-doped semiconductor material; at least one monolayer of a carbon-based material disposed between the two portions of dielectric material and over the at least one layer of the n-doped semiconductor material; two terminal electrodes, each electrode disposed in electrical communication with a respective one of the portions of dielectric material; and a gate electrode in electrical communication with the at least one layer of the n-doped semiconductor material. The method comprises: applying a voltage across the gate electrode and one of the two terminal electrodes; and exposing the photodiode device to electromagnetic radiation.

Abstract translation: 在一个实施例中提供了一种用于操作光电二极管器件的方法，该器件包括：至少一层n掺杂半导体材料; 介电材料的两部分分别设置在n掺杂半导体材料的至少一层的分离区域上; 设置在电介质材料的两个部分之间并且在n掺杂半导体材料的至少一个层上的碳基材料的至少一个单层; 两个端子电极，每个电极设置成与电介质材料的相应部分电连通; 以及栅电极，与n掺杂半导体材料的至少一层电连通。 该方法包括：在栅电极和两个端电极中的一个之间施加电压; 以及将所述光电二极管器件暴露于电磁辐射。