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Patent Agency Ranking
公开(公告)号：US20250011160A1
公开(公告)日：2025-01-09
申请号：US18897280
申请日：2024-09-26
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Martin E. Roden , Laura M. Woo
Abstract: A method for fabricating a micro-electronics H-frame device is provided by micro-machining a top cover usable in the device, and micro-machining a bottom cover usable in the device. The method includes fabricating together on a front of a wafer a top surface of a top substrate, the top substrate usable in the device, and a bottom surface of a bottom substrate, the bottom substrate usable in the device, wherein the top surface of the top substrate comprises top substrate top metallization, and wherein the bottom surface of the bottom substrate comprises bottom surface bottom metallization. In addition, fabricating mid-substrate metallization, bonding the top substrate to the top cover, and bonding the bottom substrate to the bottom cover are performed. The top substrate is bonded to a top surface of the mid-substrate metallization and bonding the bottom substrate to a bottom surface of the mid-substrate metallization, thereby creating a vertical electrical connection between the top substrate and the bottom substrate.
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公开(公告)号：US20220289559A1
公开(公告)日：2022-09-15
申请号：US17198700
申请日：2021-03-11
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Martin E. Roden , Laura M. Woo
Abstract: A microelectronics H-frame device includes: a stack of two or more substrates wherein the substrate stack comprises a top substrate and a bottom substrate, wherein bonding of the top substrate to the bottom substrate creates a vertical electrical connection between the top substrate and the bottom substrate, wherein the top surface of the top substrate comprises top substrate top metallization, wherein the bottom surface of the bottom substrate comprises bottom substrate bottom metallization; mid-substrate metallization located between the top substrate and the bottom substrate; a micro-machined top cover bonded to a top side of the substrate stack; and a micro-machined bottom cover bonded to a bottom side of the substrate stack.
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公开(公告)号：US12122666B2
公开(公告)日：2024-10-22
申请号：US17198700
申请日：2021-03-11
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Martin E. Roden , Laura M. Woo
CPC classification number: B81B7/0006 , B81B7/0019 , B81C3/001 , B81C3/005 , B81B2207/07 , B81B2207/091
Abstract: A microelectronics H-frame device includes: a stack of two or more substrates wherein the substrate stack comprises a top substrate and a bottom substrate, wherein bonding of the top substrate to the bottom substrate creates a vertical electrical connection between the top substrate and the bottom substrate, wherein the top surface of the top substrate comprises top substrate top metallization, wherein the bottom surface of the bottom substrate comprises bottom substrate bottom metallization; mid-substrate metallization located between the top substrate and the bottom substrate; a micro-machined top cover bonded to a top side of the substrate stack; and a micro-machined bottom cover bonded to a bottom side of the substrate stack.
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公开(公告)号：US12022608B2
公开(公告)日：2024-06-25
申请号：US17219103
申请日：2021-03-31
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Martin E. Roden , Laura M. Woo
IPC: H05K1/02 , H01L23/04 , H01L23/522 , H01L23/528 , H01L23/66 , H01P3/08
CPC classification number: H05K1/0237 , H01L23/04 , H01L23/5221 , H01L23/5226 , H01L23/528 , H01L23/66 , H01P3/08
Abstract: A microelectronics H-frame device comprising an RF crossover includes: a stack of two or more substrates, wherein a bottom surface of a top substrate comprises top substrate bottom metallization, and wherein a top surface of a bottom substrate comprises bottom substrate top metallization, wherein the top substrate bottom metallization and the bottom substrate top metallization form a ground plane that provides isolation to allow a first signal line to traverse one or more of the top substrate and the bottom substrate without being disturbed by a second signal line traversing one or more of the top substrate and the bottom substrate at a non-zero angle relative to the first signal line, at least one of the first signal line and the second signal line passing to a second level with the protection of the ground plane, thereby providing isolation from the other signal line.
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公开(公告)号：US20220408526A1
公开(公告)日：2022-12-22
申请号：US17896425
申请日：2022-08-26
Applicant: Northrop Grumman Systems Corporation
Inventor： Elizabeth T. Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S. Tsai , Ming-Jong Shiau , Daniel R. Scherrer , Martin E. Roden
Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
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