公开(公告)号：US11923656B2

公开(公告)日：2024-03-05

申请号：US17277032

申请日：2019-08-09

Applicant: OSRAM OLED GmbH

Inventor： Bruno Jentzsch ,  Alexander Behres ,  Hans-Jürgen Lugauer

IPC: H01S5/026 ,  H01S5/042 ,  H01S5/062 ,  H01S5/42

CPC classification number: H01S5/026 ,  H01S5/04256 ,  H01S5/0624 ,  H01S5/423

Abstract: A laser device is provided which comprises a common waveguide layer and a plurality of laser bodies, wherein each of the laser bodies has an active region configured for generating coherent electromagnetic radiation. The laser bodies are arranged side by side on the common waveguide layer, wherein the laser bodies are directly adjacent to the common waveguide layer. In particular, the laser bodies are configured to be phase-coupled to each other via the waveguide layer during operation of the laser device.
Furthermore, a method for producing such a phase-coupled laser device is provided.

公开(公告)号：US20210273400A1

公开(公告)日：2021-09-02

申请号：US17277032

申请日：2019-08-09

Applicant: OSRAM OLED GmbH

Inventor： Bruno Jentzsch ,  Alexander Behres ,  Hans-Jürgen Lugauer

IPC: H01S5/026 ,  H01S5/062 ,  H01S5/42 ,  H01S5/042

Abstract: A laser device is provided which comprises a common waveguide layer and a plurality of laser bodies, wherein each of the laser bodies has an active region configured for generating coherent electromagnetic radiation. The laser bodies are arranged side by side on the common waveguide layer, wherein the laser bodies are directly adjacent to the common waveguide layer. In particular, the laser bodies are configured to be phase-coupled to each other via the waveguide layer during operation of the laser device.
Furthermore, a method for producing such a phase-coupled laser device is provided.

公开(公告)号：US11495939B2

公开(公告)日：2022-11-08

申请号：US16977888

申请日：2019-03-05

Applicant: OSRAM OLED GmbH

Inventor： Bruno Jentzsch ,  Alvaro Gomez-Iglesias ,  Alexander Tonkikh ,  Stefan Illek

IPC: H01S5/026 ,  H01S5/02 ,  H01S5/028 ,  H01S5/10 ,  H01S5/20

Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

公开(公告)号：US20210006033A1

公开(公告)日：2021-01-07

申请号：US16977888

申请日：2019-03-05

Applicant: OSRAM OLED GmbH

Inventor： Bruno Jentzsch ,  Alvaro Gomez-Iglesias ,  Alexander Tonkikh ,  Stefan Illek

IPC: H01S5/026 ,  H01S5/028 ,  H01S5/10 ,  H01S5/20 ,  H01S5/02

Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.