公开(公告)号：US11107954B2

公开(公告)日：2021-08-31

申请号：US16621255

申请日：2018-06-11

Applicant: OSRAM OLED GmbH

Inventor： Jens Ebbecke

IPC: H01L33/44 ,  H01L33/32 ,  H01L33/30 ,  H01L33/00

Abstract: A light-emitting diode chip that includes an epitaxial semiconductor layer sequence having an active region that generates electromagnetic radiation during operation, and a passivation layer comprising magnesium oxide and magnesium nitride. The passivation layer may be applied to a lateral surface of the semiconductor layer sequence, and the passivation layer covering at least the active region.

公开(公告)号：US11984704B2

公开(公告)日：2024-05-14

申请号：US17277023

申请日：2019-09-12

Applicant: OSRAM OLED GmbH

Inventor： Jens Ebbecke

IPC: H01S5/22 ,  H01S5/042 ,  H01S5/065

CPC classification number: H01S5/221 ,  H01S5/0421 ,  H01S5/0653 ,  H01S5/2215

Abstract: In an embodiment, the gain-guided semiconductor laser includes a semiconductor layer sequence and electrical contact pads. The semiconductor layer sequence includes an active zone for radiation generation, a waveguide layer, and a cladding layer. The semiconductor layer sequence further includes a current diaphragm layer which is electrically conductive along a resonator axis (R) in a central region and electrically insulating in adjoining edge regions. Transverse to the resonator axis (R), the central region includes a width of at least 10 μm and the edge regions includes at least a minimum width. The minimum width is 3 μm or more. Seen in plan view, the semiconductor layer sequence as well as at least one of the contact pads on the semiconductor layer sequence are continuous components extending in the central region as well as on both sides at least up to the minimum width in the direction transverse to the resonator axis (R) adjoining the central region and beyond the central region.

公开(公告)号：US20220029388A1

公开(公告)日：2022-01-27

申请号：US17277023

申请日：2019-09-12

Applicant: OSRAM OLED GmbH

Inventor： Jens Ebbecke

IPC: H01S5/22 ,  H01S5/042 ,  H01S5/065

Abstract: In an embodiment, the gain-guided semiconductor laser includes a semiconductor layer sequence and electrical contact pads. The semiconductor layer sequence includes an active zone for radiation generation, a waveguide layer, and a cladding layer. The semiconductor layer sequence further includes a current diaphragm layer which is electrically conductive along a resonator axis (R) in a central region and electrically insulating in adjoining edge regions. Transverse to the resonator axis (R), the central region includes a width of at least 10 μm and the edge regions includes at least a minimum width. The minimum width is 3 μm or more. Seen in plan view, the semiconductor layer sequence as well as at least one of the contact pads on the semiconductor layer sequence are continuous components extending in the central region as well as on both sides at least up to the minimum width in the direction transverse to the resonator axis adjoining the central region and beyond the central region.

公开(公告)号：US10580938B2

公开(公告)日：2020-03-03

申请号：US15777633

申请日：2016-11-17

Applicant: OSRAM OLED GmbH

Inventor： Jens Ebbecke ,  Petrus Sundgren ,  Roland Zeisel

IPC: H01L33/44 ,  H01L33/30 ,  H01L33/00

Abstract: A light-emitting diode chip and a method for manufacturing a light-emitting diode chip are disclosed. In an embodiment a light-emitting diode chip includes an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation and a passivation layer comprising statically fixed electrical charge carriers, wherein the passivation layer is located on a side surface of the semiconductor layer sequence covering at least the active zone.

公开(公告)号：US10651342B2

公开(公告)日：2020-05-12

申请号：US16315463

申请日：2017-07-11

Applicant: OSRAM OLED GmbH

Inventor： Roland Zeisel ,  Michael Binder ,  Jens Ebbecke ,  Tobias Meyer

IPC: H01L33/22 ,  H01L33/02 ,  H01L33/06

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor body comprising a first semiconductor structure, a second semiconductor structure and an active region between the first and the second semiconductor structure and a plurality of recesses, each penetrating at least one of the semiconductor structures and the active region, wherein a cover surface of the active region is a continuous surface, and wherein at least in some of the recesses, surfaces of the recesses are completely covered with an electrically insulating material.