公开(公告)号：US20210217663A1

公开(公告)日：2021-07-15

申请号：US17053697

申请日：2019-05-07

Applicant: OSRAM OLED GMBH

Inventor： Lars NÄHLE ,  Sven GERHARD

IPC: H01L21/78 ,  H01L21/02 ,  H01L21/268

Abstract: A method for severing an epitaxially grown semiconductor body is given, in which
a) a growth substrate (2) is provided;
b) at least one trench (20) is produced in a first main surface (2a) of the growth substrate (2) by etching;
c) a semiconductor material is epitaxially deposited on the first main surface (2a) and in the trench (20), wherein a semiconductor body (1) is formed, and the semiconductor body at least partially fills the trench (20); and
d) the semiconductor body and the growth substrate are cut along the main direction of the trench.
Furthermore, a semiconductor chip with a cover surface and side surfaces is specified, in which the side surfaces each have a beveled section that is adjacent to the cover surface and whose surface is created by epitaxy.

公开(公告)号：US20210257812A1

公开(公告)日：2021-08-19

申请号：US16973458

申请日：2019-06-12

Applicant: OSRAM OLED GmbH

Inventor： Sven GERHARD ,  Christoph EICHLER ,  Alfred LELL ,  Muhammad ALI

IPC: H01S5/22 ,  H01S5/042 ,  H01S5/028 ,  H01S5/026 ,  H01S5/02

Abstract: A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.

公开(公告)号：US20210249843A1

公开(公告)日：2021-08-12

申请号：US16973452

申请日：2019-06-06

Applicant: OSRAM OLED GmbH

Inventor： Bernhard STOJETZ ,  Christoph EICHLER ,  Alfred LELL ,  Sven GERHARD

IPC: H01S5/183 ,  H01S5/04 ,  H01S5/40

Abstract: An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium.