公开(公告)号：US20210257812A1

公开(公告)日：2021-08-19

申请号：US16973458

申请日：2019-06-12

Applicant: OSRAM OLED GmbH

Inventor： Sven GERHARD ,  Christoph EICHLER ,  Alfred LELL ,  Muhammad ALI

IPC: H01S5/22 ,  H01S5/042 ,  H01S5/028 ,  H01S5/026 ,  H01S5/02

Abstract: A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.

公开(公告)号：US20200259309A1

公开(公告)日：2020-08-13

申请号：US16647324

申请日：2018-09-12

Applicant: OSRAM OLED GMBH

Inventor： Alfred LELL ,  Muhammad ALI ,  Bernhard STOJETZ ,  Harald KÖNIG

IPC: H01S5/024 ,  H01S5/40 ,  H01S5/30 ,  H01S5/00

Abstract: A light-emitting semiconductor component (99) comprising a laser bar (100) comprising at least two individual emitters (2), and a conversion element (300) arranged downstream of the laser bar (100) in the beam path, wherein at least some of the individual emitters (2) are arranged side by side in a lateral transverse direction (X), the laser bar (100) is formed with a nitride compound semiconductor material, the individual emitters (2) are configured to emit primary radiation (L1) during normal operation and the conversion element (300) is configured to convert at least part of the primary radiation (L1) into secondary radiation (L2), the secondary radiation (L2) having a longer wavelength than the primary radiation (L1).