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公开(公告)号：US20220013990A1
公开(公告)日：2022-01-13
申请号：US17289124
申请日：2019-11-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jan Wagner , Werner Bergbauer , Christoph Eichler , Alfred Lell , Georg Brüderl , Matthias Peter
Abstract: In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlxInyGa1-x-yN with 0≤x≤1, 0≤y
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2.发明公开公开(公告)号：US20230283040A1
公开(公告)日：2023-09-07
申请号：US18006077
申请日：2021-07-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Jan Wagner , Lars Naehle , Sven Gerhard , Alfred Lell , Harald Koenig , Christoph Eichler , Georg Brüderl , Martin Rudolf Behringer
CPC classification number: H01S5/0207 , H01S5/4087 , H01S5/22 , H01S5/4031 , H01S5/026 , H01L33/0075 , H01L33/32 , H01S5/34
Abstract: The invention relates to a method for producing a radiation-emitting semiconductor body, including the following steps: providing a growth substrate having a main surface; producing a plurality of distributor structures on the main surface of the growth substrate; epitaxially depositing a compound semiconductor material on the main surface of the growth substrate, wherein the epitaxial growth of the compound semiconductor material varies along the main surface because of the distributor structures, such that the epitaxial deposition produces an epitaxial semiconductor layer sequence having at least a first emitter region and a second emitter region on the main surface, the first emitter region and the second emitter region being laterally adjacent to each other in a top view of a main surface of the semiconductor body, and the first emitter region and the second emitter region producing electromagnetic radiation of different wavelength ranges during operation. The invention also relates to a radiation-emitting semiconductor body.
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公开(公告)号：US12021350B2
公开(公告)日：2024-06-25
申请号：US17289124
申请日：2019-11-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jan Wagner , Werner Bergbauer , Christoph Eichler , Alfred Lell , Georg Brüderl , Matthias Peter
CPC classification number: H01S5/4031 , H01S5/34333
Abstract: In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlxInyGa1-x-yN with 0≤x≤1, 0≤y
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