公开(公告)号：US20140339498A1

公开(公告)日：2014-11-20

申请号：US14344532

申请日：2012-07-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Martin R. Behringer ,  Christoph Klemp ,  Ivar Tångring ,  Peter Heidborn

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/30 ,  H01L33/0025 ,  H01L33/06 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A radiation-emitting semiconductor chip includes a semiconductor body with a semiconductor layer sequence, wherein the semiconductor body with the semiconductor layer sequence extends in a vertical direction between a first major face and a second major face; the semiconductor layer sequence includes an active region that generates radiation, a first region of a first conduction type and a second region of a second conduction type differing from the first conduction type; the first region extends in a vertical direction between the first major face and the active region; the second region extends in a vertical direction between the second major face and the active region; at least one layer of the active region is based on an arsenide compound semiconductor material; and relative to its respective extent in the vertical direction, the first region or the second region is based in a proportion of at least half on a phosphide compound semiconductor material.

Abstract translation: 辐射发射半导体芯片包括具有半导体层序列的半导体本体，其中具有半导体层序列的半导体本体在第一主面和第二主面之间沿垂直方向延伸; 半导体层序列包括产生辐射的有源区，第一导电类型的第一区域和不同于第一导电类型的第二导电类型的第二区域; 所述第一区域在所述第一主面和所述有源区域之间沿垂直方向延伸; 所述第二区域在所述第二主面和所述有源区域之间沿垂直方向延伸; 所述有源区的至少一层基于砷化物半导体材料; 并且相对于其在垂直方向上的相应范围，第一区域或第二区域以磷化合物半导体材料的至少一半的比例为基准。

公开(公告)号：US09172014B2

公开(公告)日：2015-10-27

申请号：US14352724

申请日：2012-10-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin R. Behringer ,  Markus Bröll ,  Christoph Klemp

IPC: H01L33/58 ,  H01L31/14 ,  H01L29/06 ,  H01L33/22

CPC classification number: H01L33/58 ,  H01L33/22

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates an electromagnetic radiation and a light exit side, and a light coupling-out layer applied to the light exit side, wherein the light coupling-out layer includes of radiation-inactive nanocrystals composed of a material transmissive to the radiation generated, and a refractive index of the radiation-transmissive material for the radiation is at least 1.9.

Abstract translation: 光电子半导体芯片包括具有生成电磁辐射和光出射侧的有源层的半导体层序列和施加到光出射侧的光耦合层，其中光耦合层包括辐射非活性的 由对所产生的辐射透射的材料构成的纳米晶体和用于辐射的辐射透射材料的折射率至少为1.9。

公开(公告)号：US20140252398A1

公开(公告)日：2014-09-11

申请号：US14352724

申请日：2012-10-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin R. Behringer ,  Markus Bröll ,  Christoph Klemp

IPC: H01L33/58

CPC classification number: H01L33/58 ,  H01L33/22

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates an electromagnetic radiation and a light exit side, and a light coupling-out layer applied to the light exit side, wherein the light coupling-out layer includes of radiation-inactive nanocrystals composed of a material transmissive to the radiation generated, and a refractive index of the radiation-transmissive material for the radiation is at least 1.9.

Abstract translation: 光电子半导体芯片包括具有生成电磁辐射和光出射侧的有源层的半导体层序列和施加到光出射侧的光耦合层，其中光耦合层包括辐射非活性的 由对所产生的辐射透射的材料构成的纳米晶体和用于辐射的辐射透射材料的折射率至少为1.9。