公开(公告)号：US12278091B2

公开(公告)日：2025-04-15

申请号：US17536518

申请日：2021-11-29

Applicant: PSK INC.

Inventor： Kwang Sung Yoo ,  A Ram Kim ,  Song I Han

IPC: H01J37/32

Abstract: Provided is a substrate processing apparatus including: a chuck configured to support a substrate; a dielectric plate disposed to face an upper surface of the substrate supported by the chuck; a gas supply unit configured to supply process gas to an edge region of the substrate; and a first edge electrode configured to generate plasma from the process gas to the edge region of the substrate supported by the chuck, in which the first edge electrode includes: a plurality of electrode units; and one or more insulating units provided between the electrode units.

公开(公告)号：US20230207262A1

公开(公告)日：2023-06-29

申请号：US17710269

申请日：2022-03-31

Applicant: PSK INC.

Inventor： Jong Woo Park ,  Sung Jin Yoon ,  A Ram Kim ,  Soo Yeong Yang ,  Ji Seung Kim ,  Yu Jin Jang

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32651 ,  H01J37/32522 ,  H01J2237/327

Abstract: A substrate treating apparatus includes a process treating unit providing a treating space for treating a substrate and a plasma generation unit provided above the process treating unit and generating a plasma from a process gas. The plasma generation unit includes a plasma chamber having a discharge space formed therein, an antenna surrounding an outside of the plasma chamber and flowing a high frequency current therethrough, and a cover member surrounding an outside of the antenna, and wherein the cover member is grounded.