公开(公告)号：US20230207262A1

公开(公告)日：2023-06-29

申请号：US17710269

申请日：2022-03-31

Applicant: PSK INC.

Inventor： Jong Woo Park ,  Sung Jin Yoon ,  A Ram Kim ,  Soo Yeong Yang ,  Ji Seung Kim ,  Yu Jin Jang

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32651 ,  H01J37/32522 ,  H01J2237/327

Abstract: A substrate treating apparatus includes a process treating unit providing a treating space for treating a substrate and a plasma generation unit provided above the process treating unit and generating a plasma from a process gas. The plasma generation unit includes a plasma chamber having a discharge space formed therein, an antenna surrounding an outside of the plasma chamber and flowing a high frequency current therethrough, and a cover member surrounding an outside of the antenna, and wherein the cover member is grounded.