SUBSTRATE PROCESSING APPARATUS
    1.
    发明公开

    公开(公告)号:US20240194445A1

    公开(公告)日:2024-06-13

    申请号:US18284657

    申请日:2021-12-16

    Applicant: PSK INC.

    CPC classification number: H01J37/321 H01J37/3244 H01J37/32798 H01J2237/3323

    Abstract: Provided is an apparatus for processing a substrate, the apparatus including: a chamber having a processing space; a support unit for supporting a substrate in the processing space; a gas supply unit for supplying process gas to the processing space; and a plasma generation unit for generating plasma from the process gas, in which the plasma generation unit includes: an inner coil part including a plurality of inner coils; an outer coil part provided to surround the inner coil part when viewed from above and including a plurality of outer coils; an upper power source for applying power to the inner coil part and the outer coil part, and a ground plate disposed above the inner coil part and the outer coil part and grounding the inner coil part and the outer coil part.

    SUBSTRATE PROCESSING APPARATUS
    2.
    发明申请

    公开(公告)号:US20250006467A1

    公开(公告)日:2025-01-02

    申请号:US18293321

    申请日:2022-07-19

    Applicant: PSK INC.

    Abstract: Provided is an apparatus for processing a substrate, the apparatus including: a housing having a processing space for processing a substrate; a window unit for covering an upper portion of the processing space so that the processing space is sealed; a support unit for supporting the substrate in the processing space; a gas supply unit including a nozzle for supplying gas to the processing space; and a plasma unit disposed outside the processing space, and generating plasma from the gas, in which the nozzle may include: a body formed with an internal space and an outlet for supplying the gas in the internal space to the processing space; and an insertion member inserted into a top end of the body.

Patent Agency Ranking