公开(公告)号：US20240194445A1

公开(公告)日：2024-06-13

申请号：US18284657

申请日：2021-12-16

Applicant: PSK INC.

Inventor： Chi Young LEE ,  A Ram KIM ,  Soo Yeong YANG ,  Young Tak YOON ,  Yun Young LEE ,  Jin Chul SON

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/3244 ,  H01J37/32798 ,  H01J2237/3323

Abstract: Provided is an apparatus for processing a substrate, the apparatus including: a chamber having a processing space; a support unit for supporting a substrate in the processing space; a gas supply unit for supplying process gas to the processing space; and a plasma generation unit for generating plasma from the process gas, in which the plasma generation unit includes: an inner coil part including a plurality of inner coils; an outer coil part provided to surround the inner coil part when viewed from above and including a plurality of outer coils; an upper power source for applying power to the inner coil part and the outer coil part, and a ground plate disposed above the inner coil part and the outer coil part and grounding the inner coil part and the outer coil part.