公开(公告)号：US20240021418A1

公开(公告)日：2024-01-18

申请号：US18352506

申请日：2023-07-14

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  Tae Hwan YOUN ,  Hyeon Won JUNG

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32642 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32541 ,  H01J2237/334

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substate within the treating space; and a plasma source for generating a plasma by exciting a gas supplied to the treating space, and wherein the support unit includes: a chuck having the substrate mounted to a top surface thereof; and a ring member in a ring shape surrounding an outer side of the chuck, and the ring member includes a cut surface which divides the ring member and a holding member positioned at the cut surface which holds a position of the ring member which is divided by the cut surface.