公开(公告)号：US20210305014A1

公开(公告)日：2021-09-30

申请号：US16886479

申请日：2020-05-28

Applicant: PSK INC.

Inventor： Geon Jong KIM ,  Tae Hwan YOUN ,  Jong Chan LEE

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus for processing a substrate is provided. The apparatus for processing the substrate includes a housing having a process space, a gas supply unit to supply gas into the process space, a support unit including a chuck to support the substrate in the process space and a lower electrode to surround the chuck when viewed from a top, a temperature adjusting plate provided in the housing, a dielectric plate unit coupled to the temperature adjusting plate, and having a dielectric plate disposed in opposite to the substrate supported by the support unit in the process space, and an upper electrode unit coupled to the temperature adjusting plate, and having an upper electrode disposed in opposition to the lower electrode. The dielectric plate unit includes a first base disposed between the dielectric plate and the temperature adjusting plate.

公开(公告)号：US20250079133A1

公开(公告)日：2025-03-06

申请号：US18026619

申请日：2021-12-02

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  Tae Hwan YOUN ,  Geon Jong KIM

IPC: H01J37/32

Abstract: The present disclosure provides an apparatus for treating a substrate. The apparatus includes a chuck supporting the substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate, and an edge electrode provided to surround the substrate supported by the chuck when viewed from a top and configured to generate plasma from the gas, in which the edge electrode has a ring shape and a groove recessed from an inner circumference of the edge electrode to an outer circumference of the edge electrode when viewed from the top is formed in the edge electrode.

公开(公告)号：US20240021418A1

公开(公告)日：2024-01-18

申请号：US18352506

申请日：2023-07-14

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  Tae Hwan YOUN ,  Hyeon Won JUNG

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32642 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32541 ,  H01J2237/334

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substate within the treating space; and a plasma source for generating a plasma by exciting a gas supplied to the treating space, and wherein the support unit includes: a chuck having the substrate mounted to a top surface thereof; and a ring member in a ring shape surrounding an outer side of the chuck, and the ring member includes a cut surface which divides the ring member and a holding member positioned at the cut surface which holds a position of the ring member which is divided by the cut surface.