公开(公告)号：US20240274411A1

公开(公告)日：2024-08-15

申请号：US18022550

申请日：2021-12-02

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  Ju Young PARK

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32743 ,  H01J2237/2005 ,  H01J2237/20235 ,  H01J2237/334

Abstract: Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a housing defining a treatment space formed by a combination of an upper housing and a lower housing, a gas supply unit configured to supply gas to the treatment space, a support unit including a chuck configured to support the substrate in the treatment space and an upper electrode provided to surround the check when viewed from a top view, a dielectric plate unit including a dielectric plate arranged to oppose the substrate supported by the support unit in the treatment space, and an upper electrode unit coupled to the dielectric plate unit and including an upper electrode arranged to oppose the lower electrode, in which the upper electrode unit is coupled to the lower housing.

公开(公告)号：US20230068224A1

公开(公告)日：2023-03-02

申请号：US17536518

申请日：2021-11-29

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  A Ram KIM ,  Song I HAN

IPC: H01J37/32

Abstract: Provided is a substrate processing apparatus including: a chuck configured to support a substrate; a dielectric plate disposed to face an upper surface of the substrate supported by the chuck; a gas supply unit configured to supply process gas to an edge region of the substrate; and a first edge electrode configured to generate plasma from the process gas to the edge region of the substrate supported by the chuck, in which the first edge electrode includes: a plurality of electrode units; and one or more insulating units provided between the electrode units.

公开(公告)号：US20240297023A1

公开(公告)日：2024-09-05

申请号：US18026528

申请日：2021-12-02

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  Jong Chan LEE ,  Seong Min NAM

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32568 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/6831 ,  H01J2237/2007 ,  H01J2237/334

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a housing having an interior space, a lower electrode unit supporting a substrate in the interior space, an upper electrode unit facing the lower electrode unit, and a gas supply unit supplying a process gas to the interior space, wherein the upper electrode unit includes a dielectric plate facing an upper surface of the substrate supported by the lower electrode unit, a support body supporting the dielectric plate, wherein the support body and the dielectric plate are combined with each other to form a buffer space and the gas supply unit supplies the process gas to the interior space via the buffer space, and a baffle ring disposed on a flow path of the process gas flowing from the buffer space to the interior space.

公开(公告)号：US20240071783A1

公开(公告)日：2024-02-29

申请号：US18364626

申请日：2023-08-03

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  Jong Chan LEE

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/683

CPC classification number: H01L21/67069 ,  H01J37/32449 ,  H01J37/32568 ,  H01L21/3065 ,  H01L21/6833

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substrate at the treating space; and a gas supply unit configured to supply a gas which is excited to a plasma to the treating space, and wherein the support unit includes: a chuck supporting a center region of the substrate; and an edge electrode formed in a ring shape, and wherein the edge electrode includes: a body portion surrounding the chuck at an outer side of the chuck; and a protrusion portion formed protruding to an outer side of the body portion, and a hole is formed at the protrusion portion penetrating the protrusion portion and which exhausts an atmosphere of the treating space.

公开(公告)号：US20250079133A1

公开(公告)日：2025-03-06

申请号：US18026619

申请日：2021-12-02

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  Tae Hwan YOUN ,  Geon Jong KIM

IPC: H01J37/32

Abstract: The present disclosure provides an apparatus for treating a substrate. The apparatus includes a chuck supporting the substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate, and an edge electrode provided to surround the substrate supported by the chuck when viewed from a top and configured to generate plasma from the gas, in which the edge electrode has a ring shape and a groove recessed from an inner circumference of the edge electrode to an outer circumference of the edge electrode when viewed from the top is formed in the edge electrode.

公开(公告)号：US20240021418A1

公开(公告)日：2024-01-18

申请号：US18352506

申请日：2023-07-14

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  Tae Hwan YOUN ,  Hyeon Won JUNG

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32642 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32541 ,  H01J2237/334

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substate within the treating space; and a plasma source for generating a plasma by exciting a gas supplied to the treating space, and wherein the support unit includes: a chuck having the substrate mounted to a top surface thereof; and a ring member in a ring shape surrounding an outer side of the chuck, and the ring member includes a cut surface which divides the ring member and a holding member positioned at the cut surface which holds a position of the ring member which is divided by the cut surface.

公开(公告)号：US20210241997A1

公开(公告)日：2021-08-05

申请号：US16886543

申请日：2020-05-28

Applicant: PSK INC.

Inventor： Jong Chan LEE ,  Geon Jong KIM ,  Kwang Sung YOO ,  Seok June YUN

IPC: H01J37/32 ,  H01L21/687 ,  H05H1/46

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.