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    Method for reducing the intrinsic stress of high density plasma films
    5.
    发明授权
    Method for reducing the intrinsic stress of high density plasma films 失效
    降低高密度等离子体膜的固有应力的方法

    公开(公告)号：US5976993A

    公开(公告)日：1999-11-02

    申请号：US623445

    申请日：1996-03-28

    Applicant: K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

    Inventor： K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

    IPC: C23C16/40 ,  C23C16/517 ,  H01L21/316 ,  H01L21/02

    CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/517 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31612

    Abstract: A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.

    Abstract translation: 通过延迟或中断电容耦合RF能量的应用，使用HDP-CVD系统在衬底上形成一层减小的应力。 通过将工艺气体引入HDP系统室并通过将RF功率施加到感应线圈从工艺气体形成等离子体而形成该层。 在选定的时间段之后，通过维持电感耦合等离子体并且将等离子体偏压到衬底来沉积膜的第二层，以增强等离子体的溅射效应。 在优选实施例中，沉积膜是氧化硅膜，并且通过将来自RF发生器的电容耦合的RF功率施加到顶板电极和晶片支撑电极来执行偏置。

    Method for reducing the intrinsic stress of high density plasma films
    6.
    发明授权
    Method for reducing the intrinsic stress of high density plasma films 失效
    降低高密度等离子体膜的固有应力的方法

    公开(公告)号：US07294205B1

    公开(公告)日：2007-11-13

    申请号：US09362504

    申请日：1999-07-27

    Applicant: K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

    Inventor： K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

    IPC: C23C16/50 ,  C23C16/503 ,  C23C16/515 ,  C23C16/40 ,  C23C16/24 ,  H01L21/306 ,  C23F1/00

    CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/517 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31612

    Abstract: A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.

    Abstract translation: 通过延迟或中断电容耦合RF能量的应用，使用HDP-CVD系统在衬底上形成一层减小的应力。 通过将工艺气体引入HDP系统室并通过将RF功率施加到感应线圈从工艺气体形成等离子体而形成该层。 在选定的时间段之后，通过维持电感耦合等离子体并且将等离子体偏压到衬底来沉积膜的第二层，以增强等离子体的溅射效应。 在优选实施例中，沉积膜是氧化硅膜，并且通过将来自RF发生器的电容耦合的RF功率施加到顶板电极和晶片支撑电极来执行偏置。

    High deposition rate recipe for low dielectric constant films
    8.
    发明授权
    High deposition rate recipe for low dielectric constant films 失效
    低介电常数薄膜的高沉积速率配方

    公开(公告)号：US6136685A

    公开(公告)日：2000-10-24

    申请号：US868595

    申请日：1997-06-03

    Applicant: Pravin Narwankar ,  Laxman Murugesh ,  Turgut Sahin ,  Maciek Orczyk ,  Jianmin Qiao

    Inventor： Pravin Narwankar ,  Laxman Murugesh ,  Turgut Sahin ,  Maciek Orczyk ,  Jianmin Qiao

    IPC: H01L21/205 ,  C23C16/40 ,  C23C16/505 ,  C23C16/52 ,  H01L21/31 ,  H01L21/316 ,  H01L21/4763

    CPC classification number: H01L21/02131 ,  C23C16/401 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

    Abstract: An insulating film with a low dielectric constant is more quickly formed on a substrate by reducing the co-etch rate as the film is deposited. The process gas is formed into a plasma from silicon-containing and fluorine-containing gases. The plasma is biased with an RF field to enhance deposition of the film. Deposition and etching occur simultaneously. The relative rate of deposition to etching is increased in the latter portion of the deposition process by decreasing the bias RF power, which decreases the surface temperature of the substrate and decreases sputtering and etching activities. Processing time is reduced compared to processes with fixed RF power levels. Film stability, retention of water by the film, and corrosion of structures on the substrate are all improved. The film has a relatively uniform and low dielectric constant and may fill trenches with aspect ratios of at least 4:1 and gaps less than 0.5 .mu.m.

    Abstract translation: 当薄膜沉积时，通过降低共蚀刻速率，在衬底上更迅速地形成具有低介电常数的绝缘膜。 工艺气体由含硅和含氟气体形成等离子体。 等离子体被RF场偏置以增强膜的沉积。 沉积和蚀刻同时发生。 通过降低偏压RF功率，沉积过程的后一部分，相对于蚀刻的相对速率增加，这降低了衬底的表面温度并降低了溅射和蚀刻活性。 与具有固定RF功率级别的处理相比，处理时间缩短。 薄膜的稳定性，薄膜的水分保持性以及基板上的结构的腐蚀都得到改善。 该膜具有相对均匀和低的介电常数，并且可以填充具有至少4:1的纵横比和小于0.5μm的间隙的沟槽。

    Process gas distribution for forming stable fluorine-doped silicate glass and other films
    10.
    发明授权
    Process gas distribution for forming stable fluorine-doped silicate glass and other films 失效
    用于形成稳定的氟掺杂硅酸盐玻璃等膜的工艺气体分布

    公开(公告)号：US06383954B1

    公开(公告)日：2002-05-07

    申请号：US09361682

    申请日：1999-07-27

    Applicant: Yaxin Wang ,  Diana Chan ,  Turgut Sahin ,  Tetsuya Ishikawa ,  Farhad Moghadam

    Inventor： Yaxin Wang ,  Diana Chan ,  Turgut Sahin ,  Tetsuya Ishikawa ,  Farhad Moghadam

    IPC: H01L2131

    CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/455 ,  H01J37/3244 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/31625 ,  H01L21/31629

    Abstract: A substrate processing system includes a housing defining a chamber for forming a film on the substrate surface of a substrate disposed within the chamber. The system includes a first plurality of nozzles that extend into the chamber for injecting a first chemical at a first distance from a periphery of the substrate surface, and a second plurality of nozzles that extend into the chamber for injecting a second chemical at a second distance from the periphery of the substrate surface. The second distance is substantially equal to or smaller than the first distance. In one embodiment, the first chemical contains a dielectric material and the second chemical contains dopant species which react with the first chemical to deposit a doped dielectric material on the substrate. Injecting the dopant species closer to the substrate surface than previously done ensures that the dopant species are distributed substantially uniformly over the substrate surface and the deposition of a stable doped dielectric layer.

    Abstract translation: 衬底处理系统包括限定用于在设置在腔室内的衬底的衬底表面上形成膜的腔室。 该系统包括第一多个喷嘴，其延伸到腔室中，用于从衬底表面的周边第一距离处注入第一化学品;以及第二多个喷嘴，其延伸到室中，用于以第二距离注入第二化学品 从基板表面的周边。 第二距离基本上等于或小于第一距离。 在一个实施例中，第一化学品包含介电材料，第二化学品含有与第一化学物质反应以在衬底上沉积掺杂电介质材料的掺杂剂物质。 注入比以前更接近于衬底表面的掺杂剂物质确保掺杂剂物质基本均匀地分布在衬底表面上并沉积稳定的掺杂介电层。

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