公开(公告)号：US20030066749A1

公开(公告)日：2003-04-10

申请号：US10186105

申请日：2002-06-27

Applicant: President and Fellows of Harvard College

Inventor： Jene A. Golovchenko ,  Daniel Branton ,  Michael J. Aziz ,  Jiali Li ,  Derek M. Stein ,  Ciaran J. McMullan

IPC: C23C014/32

CPC classification number: B81C1/00626 ,  B81C2201/0143 ,  G01N33/48721 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A solid state structure having a surface is provided and is exposed to a flux, F, of incident ions. The conditions of this incident ion exposure are selected based on: 1 null null t null C null ( r , t ) = F null null null Y 1 + D null null 2 null C - C null trap - F null null null C null null null null C , where C is concentration of mobile adatoms at structure surface, r is vector surface position, t is time, Y1 is number of adatoms created per incident ion, D is adatom diffusivity, nulltrap is average lifetime of an adatom before adatom annihilation occurs at a structure surface defect characteristic of solid state structure material, and nullCis cross-section for adatom annihilation by incident ions characteristic of selected ion exposure conditions. Ion exposure condition selection controls sputtering of the structure surface by incident ions to transport, within the structure including the structure surface, material of the structure to a feature location, in response to the ion flux exposure, to produce a feature substantially by locally adding material of the structure to the feature location.