公开(公告)号：US10592802B2

公开(公告)日：2020-03-17

申请号：US15445945

申请日：2017-02-28

Applicant: Purdue Research Foundation

Inventor： Abhronil Sengupta ,  Zubair Al Azim ,  Xuanyao Kelvin Fong ,  Kaushik Roy

IPC: G06N3/04 ,  H01L43/08 ,  G06N3/063 ,  G06N3/08

Abstract: An electronic synapse is disclosed, comprising a heavy metal layer having a high spin orbit coupling, a domain wall magnet layer having a bottom surface adjacent to a top surface of the heavy metal layer, the domain wall magnet layer having a perpendicular magnetic anisotropy, the domain wall magnet layer having a domain wall, the domain wall running parallel to a longitudinal axis of the domain wall magnet layer, a pinned layer having perpendicular magnetic anisotropy, and an oxide tunnel barrier connected between the domain wall magnet layer and the pinned layer, wherein the pinned layer, the oxide tunnel barrier, and the free layer form a magnetic tunnel junction.

公开(公告)号：US20170249550A1

公开(公告)日：2017-08-31

申请号：US15445945

申请日：2017-02-28

Applicant: Purdue Research Foundation

Inventor： Abhronil Sengupta ,  Zubair Al Azim ,  Xuanyao Kelvin Fong ,  Kaushik Roy

IPC: G06N3/08 ,  G06N3/063 ,  G06N3/04 ,  H01L43/08 ,  H01L43/10

CPC classification number: G06N3/049 ,  G06N3/0635 ,  G06N3/088 ,  H01L43/08

Abstract: An electronic synapse is disclosed, comprising a heavy metal layer having a high spin orbit coupling, a domain wall magnet layer having a bottom surface adjacent to a top surface of the heavy metal layer, the domain wall magnet layer having a perpendicular magnetic anisotropy, the domain wall magnet layer having a domain wall, the domain wall running parallel to a longitudinal axis of the domain wall magnet layer, a pinned layer having perpendicular magnetic anisotropy, and an oxide tunnel barrier connected between the domain wall magnet layer and the pinned layer, wherein the pinned layer, the oxide tunnel barrier, and the free layer form a magnetic tunnel junction.

公开(公告)号：US12141686B2

公开(公告)日：2024-11-12

申请号：US16999049

申请日：2020-08-20

Applicant: Purdue Research Foundation

Inventor： Abhronil Sengupta ,  Sri Harsha Choday ,  Yusung Kim ,  Kaushik Roy

IPC: H01L43/08 ,  G06F7/58 ,  G06N3/04 ,  G06N3/065 ,  H10B63/00 ,  H10N50/10 ,  H10N52/00 ,  G11C11/54 ,  H10B61/00

Abstract: An electronic neuron device that includes a thresholding unit which utilizes current-induced spin-orbit torque (SOT). A two-step switching scheme is implemented with the device. In the first step, a charge current through heavy metal (HM) places the magnetization of a nano-magnet along the hard-axis (i.e. an unstable point for the magnet). In the second step, the device receives a current (from an electronic synapse) which moves the magnetization from the unstable point to one of the two stable states. The polarity of the net synaptic current determines the final orientation of the magnetization. A resistive crossbar array may also be provided which functions as the synapse generating a bipolar current that is a weighted sum of the inputs of the device.

公开(公告)号：US20210142157A1

公开(公告)日：2021-05-13

申请号：US16999049

申请日：2020-08-20

Applicant: Purdue Research Foundation

Inventor： Abhronil Sengupta ,  Sri Harsha Choday ,  Yusung Kim ,  Kaushik Roy

IPC: G06N3/063 ,  H01L43/08 ,  H01L43/06 ,  G06F7/58 ,  G06N3/04 ,  G06F7/48 ,  H01L27/24

Abstract: An electronic neuron device that includes a thresholding unit which utilizes current-induced spin-orbit torque (SOT). A two-step switching scheme is implemented with the device. In the first step, a charge current through heavy metal (HM) places the magnetization of a nano-magnet along the hard-axis (i.e. an unstable point for the magnet). In the second step, the device receives a current (from an electronic synapse) which moves the magnetization from the unstable point to one of the two stable states. The polarity of the net synaptic current determines the final orientation of the magnetization. A resistive crossbar array may also be provided which functions as the synapse generating a bipolar current that is a weighted sum of the inputs of the device.

公开(公告)号：US20170330070A1

公开(公告)日：2017-11-16

申请号：US15445906

申请日：2017-02-28

Applicant: Purdue Research Foundation

Inventor： Abhronil Sengupta ,  Sri Harsha Choday ,  Yusung Kim ,  Kaushik Roy

IPC: G06N3/063 ,  H01L27/22 ,  G06F7/58 ,  G06N3/04 ,  H01L43/08 ,  H01L43/06

CPC classification number: G06N3/0635 ,  G06F7/48 ,  G06F7/588 ,  G06F2207/4824 ,  G06N3/04 ,  G06N3/084 ,  H01L27/228 ,  H01L27/2409 ,  H01L43/06 ,  H01L43/08

Abstract: An electronic neuron device that includes a thresholding unit which utilizes current-induced spin-orbit torque (SOT). A two-step switching scheme is implemented with the device. In the first step, a charge current through heavy metal (HM) places the magnetization of a nano-magnet along the hard-axis (i.e. an unstable point for the magnet). In the second step, the device receives a current (from an electronic synapse) which moves the magnetization from the unstable point to one of the two stable states. The polarity of the net synaptic current determines the final orientation of the magnetization. A resistive crossbar array may also be provided which functions as the synapse generating a bipolar current that is a weighted sum of the inputs of the device.