公开(公告)号：US10592802B2

公开(公告)日：2020-03-17

申请号：US15445945

申请日：2017-02-28

Applicant: Purdue Research Foundation

Inventor： Abhronil Sengupta ,  Zubair Al Azim ,  Xuanyao Kelvin Fong ,  Kaushik Roy

IPC: G06N3/04 ,  H01L43/08 ,  G06N3/063 ,  G06N3/08

Abstract: An electronic synapse is disclosed, comprising a heavy metal layer having a high spin orbit coupling, a domain wall magnet layer having a bottom surface adjacent to a top surface of the heavy metal layer, the domain wall magnet layer having a perpendicular magnetic anisotropy, the domain wall magnet layer having a domain wall, the domain wall running parallel to a longitudinal axis of the domain wall magnet layer, a pinned layer having perpendicular magnetic anisotropy, and an oxide tunnel barrier connected between the domain wall magnet layer and the pinned layer, wherein the pinned layer, the oxide tunnel barrier, and the free layer form a magnetic tunnel junction.

公开(公告)号：US20170249550A1

公开(公告)日：2017-08-31

申请号：US15445945

申请日：2017-02-28

Applicant: Purdue Research Foundation

Inventor： Abhronil Sengupta ,  Zubair Al Azim ,  Xuanyao Kelvin Fong ,  Kaushik Roy

IPC: G06N3/08 ,  G06N3/063 ,  G06N3/04 ,  H01L43/08 ,  H01L43/10

CPC classification number: G06N3/049 ,  G06N3/0635 ,  G06N3/088 ,  H01L43/08

Abstract: An electronic synapse is disclosed, comprising a heavy metal layer having a high spin orbit coupling, a domain wall magnet layer having a bottom surface adjacent to a top surface of the heavy metal layer, the domain wall magnet layer having a perpendicular magnetic anisotropy, the domain wall magnet layer having a domain wall, the domain wall running parallel to a longitudinal axis of the domain wall magnet layer, a pinned layer having perpendicular magnetic anisotropy, and an oxide tunnel barrier connected between the domain wall magnet layer and the pinned layer, wherein the pinned layer, the oxide tunnel barrier, and the free layer form a magnetic tunnel junction.

公开(公告)号：US10734052B2

公开(公告)日：2020-08-04

申请号：US16168728

申请日：2018-10-23

Applicant: Purdue Research Foundation

Inventor： Zubair Al Azim ,  Ankit Sharma ,  Kaushik Roy

IPC: G11C11/16 ,  G11C11/18 ,  H01L43/10 ,  H01L43/04 ,  H01L43/08 ,  H01L43/06

Abstract: A bit cell driving mechanism is disclosed. The mechanism includes a bit cell which includes a first magnetic tunnel junction (MTJ) cell, including a pinned layer, a non-magnetic layer, a free layer having two magnetic regions separated by a laterally moveable domain wall, and a spin-hall metal layer configured to receive an electrical current therethrough which causes the DW to move laterally. The mechanism also includes a second MTJ cell coupled to the first MTJ cell as well as an interconnect driver configured to provide electrical current to the first MTJ cell during a write operation.

公开(公告)号：US20190122716A1

公开(公告)日：2019-04-25

申请号：US16168728

申请日：2018-10-23

Applicant: Purdue Research Foundation

Inventor： Zubair Al Azim ,  Ankit Sharma ,  Kaushik Roy

IPC: G11C11/16 ,  G11C11/18 ,  H01L43/04 ,  H01L43/08 ,  H01L43/10

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10

Abstract: A bit cell driving mechanism is disclosed. The mechanism includes a bit cell which includes a first magnetic tunnel junction (MTJ) cell, including a pinned layer, a non-magnetic layer, a free layer having two magnetic regions separated by a laterally moveable domain wall, and a spin-hall metal layer configured to receive an electrical current therethrough which causes the DW to move laterally. The mechanism also includes a second MTJ cell coupled to the first MTJ cell as well as an interconnect driver configured to provide electrical current to the first MTJ cell during a write operation.