公开(公告)号：US10734052B2

公开(公告)日：2020-08-04

申请号：US16168728

申请日：2018-10-23

Applicant: Purdue Research Foundation

Inventor： Zubair Al Azim ,  Ankit Sharma ,  Kaushik Roy

IPC: G11C11/16 ,  G11C11/18 ,  H01L43/10 ,  H01L43/04 ,  H01L43/08 ,  H01L43/06

Abstract: A bit cell driving mechanism is disclosed. The mechanism includes a bit cell which includes a first magnetic tunnel junction (MTJ) cell, including a pinned layer, a non-magnetic layer, a free layer having two magnetic regions separated by a laterally moveable domain wall, and a spin-hall metal layer configured to receive an electrical current therethrough which causes the DW to move laterally. The mechanism also includes a second MTJ cell coupled to the first MTJ cell as well as an interconnect driver configured to provide electrical current to the first MTJ cell during a write operation.

公开(公告)号：US20190122716A1

公开(公告)日：2019-04-25

申请号：US16168728

申请日：2018-10-23

Applicant: Purdue Research Foundation

Inventor： Zubair Al Azim ,  Ankit Sharma ,  Kaushik Roy

IPC: G11C11/16 ,  G11C11/18 ,  H01L43/04 ,  H01L43/08 ,  H01L43/10

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10

Abstract: A bit cell driving mechanism is disclosed. The mechanism includes a bit cell which includes a first magnetic tunnel junction (MTJ) cell, including a pinned layer, a non-magnetic layer, a free layer having two magnetic regions separated by a laterally moveable domain wall, and a spin-hall metal layer configured to receive an electrical current therethrough which causes the DW to move laterally. The mechanism also includes a second MTJ cell coupled to the first MTJ cell as well as an interconnect driver configured to provide electrical current to the first MTJ cell during a write operation.