公开(公告)号：US11688445B2

公开(公告)日：2023-06-27

申请号：US17588317

申请日：2022-01-30

Applicant: Purdue Research Foundation

Inventor： Sandeep Krishna Thirumala ,  Sumeet Kumar Gupta ,  Yi-Tse Hung ,  Zhihong Chen

IPC: G11C11/00 ,  G11C11/16 ,  G11C11/18 ,  H10B61/00 ,  H10N52/80 ,  H10N52/00

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H10B61/00 ,  H10N52/101 ,  H10N52/80

Abstract: A memory cell is disclosed which includes a semiconductor layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another along a first axis and wherein the semiconductor layer extends beyond the first axis along a second axis substantially perpendicular to the first axis, thereby forming a first wing, a third electrode separated from the semiconductor layer by an insulating layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.

公开(公告)号：US20220157359A1

公开(公告)日：2022-05-19

申请号：US17588317

申请日：2022-01-30

Applicant: Purdue Research Foundation

Inventor： Sandeep Krishna Thirumala ,  Sumeet Kumar Gupta ,  Yi-Tse Hung ,  Zhihong Chen

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/04 ,  G11C11/18 ,  H01L43/06

Abstract: A memory cell is disclosed which includes a semiconductor layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another along a first axis and wherein the semiconductor layer extends beyond the first axis along a second axis substantially perpendicular to the first axis, thereby forming a first wing, a third electrode separated from the semiconductor layer by an insulating layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.

公开(公告)号：US11250896B2

公开(公告)日：2022-02-15

申请号：US16909971

申请日：2020-06-23

Applicant: Purdue Research Foundation

Inventor： Sandeep Krishna Thirumala ,  Sumeet Kumar Gupta ,  Yi-Tse Hung ,  Zhihong Chen

IPC: G11C11/00 ,  G11C11/16 ,  H01L27/22 ,  H01L43/04 ,  G11C11/18 ,  H01L43/06

Abstract: A memory cell is disclosed which includes a conductive layer, an insulating layer disposed atop the conducting layer, a semiconductor layer disposed atop the insulating layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another and wherein the semiconductor layer extends beyond the first and second electrodes forming a first wing, a third electrode coupled to the conductive layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.