公开(公告)号：US10151027B2

公开(公告)日：2018-12-11

申请号：US15447065

申请日：2017-03-01

Applicant: Purdue Research Foundation

Inventor： Sunny Chugh ,  Ruchit Mehta ,  Zhihong Chen

IPC: C23C16/26 ,  C23C16/505 ,  C23C16/02 ,  H01J37/32 ,  H01L29/16 ,  C01B32/182 ,  C01B32/186 ,  C01B32/184 ,  H01L21/02

Abstract: A graphene deposition process. The process includes the steps of placing a substrate into a deposition chamber and heating the chamber, generating radio frequency plasma at a location proximate to the substrate while flowing a precursor gas containing carbon through the plasma and over the substrate.

公开(公告)号：US20170253962A1

公开(公告)日：2017-09-07

申请号：US15447065

申请日：2017-03-01

Applicant: Purdue Research Foundation

Inventor： Sunny Chugh ,  Ruchit Mehta ,  Zhihong Chen

IPC: C23C16/26 ,  C23C16/02 ,  H01L29/16 ,  H01L21/02 ,  H01L21/306 ,  C23C16/505 ,  H01J37/32

CPC classification number: C23C16/26 ,  C01B32/182 ,  C01B32/184 ,  C01B32/186 ,  C23C16/0227 ,  C23C16/505 ,  H01J37/32082 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/0262 ,  H01L29/1608

Abstract: A graphene deposition process. The process includes the steps of placing a substrate into a deposition chamber and heating the chamber, generating radio frequency plasma at a location proximate to the substrate while flowing a precursor gas containing carbon through the plasma and over the substrate.