公开(公告)号：US10418406B2

公开(公告)日：2019-09-17

申请号：US15856747

申请日：2017-12-28

Applicant: RAYTHEON COMPANY

Inventor： Sean P. Kilcoyne ,  John L. Vampola ,  Barry M. Starr ,  Chad W. Fulk ,  Christopher L. Mears ,  John J. Drab

IPC: H01L27/146 ,  H01L21/768 ,  H01L21/302

Abstract: Aspects and examples described herein provide a hybrid imaging sensor chip assembly for reducing undesired radiative transfer between a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit (ROIC) and an optical detector, and methods of manufacturing a hybrid imaging sensor chip assembly. In one example, a hybrid imaging sensor chip assembly includes an optical detector configured to collect electromagnetic radiation incident thereon, a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit (ROIC), and a radiation-shielding wafer interposed between the optical detector and the CMOS ROIC, the radiation-shielding wafer including a plurality of through wafer vias (TWVs) electrically coupled to the optical detector and the CMOS ROIC, the radiation-shielding wafer being positioned to prevent radiative transfer between the CMOS ROIC and the optical detector.

公开(公告)号：US20180190705A1

公开(公告)日：2018-07-05

申请号：US15856747

申请日：2017-12-28

Applicant: RAYTHEON COMPANY

Inventor： Sean P. Kilcoyne ,  John L. Vampola ,  Barry M. Starr ,  Chad W. Fulk ,  Christopher L. Mears ,  John J. Drab

IPC: H01L27/146 ,  H01L21/302 ,  H01L21/768

CPC classification number: H01L27/14636 ,  H01L21/302 ,  H01L21/76877 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/1469

Abstract: Aspects and examples described herein provide a hybrid imaging sensor chip assembly for reducing undesired radiative transfer between a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit (ROIC) and an optical detector, and methods of manufacturing a hybrid imaging sensor chip assembly. In one example, a hybrid imaging sensor chip assembly includes an optical detector configured to collect electromagnetic radiation incident thereon, a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit (ROIC), and a radiation-shielding wafer interposed between the optical detector and the CMOS ROIC, the radiation-shielding wafer including a plurality of through wafer vias (TWVs) electrically coupled to the optical detector and the CMOS ROIC, the radiation-shielding wafer being positioned to prevent radiative transfer between the CMOS ROIC and the optical detector.