公开(公告)号：US11710756B2

公开(公告)日：2023-07-25

申请号：US16952783

申请日：2020-11-19

Applicant: RAYTHEON COMPANY

Inventor： Jamal I. Mustafa ,  Robert C. Anderson ,  John L. Vampola ,  Sean P. Kilcoyne ,  Eric R. Miller ,  George Grama

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/1469 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1462

Abstract: A direct-bond hybridization (DBH) method is provided to assemble a sensor wafer device. The DBH method includes fabricating an optical element on a handle wafer and depositing first oxide with n-x thickness on the optical element where n is an expected final oxide thickness of the sensor wafer, depositing second oxide with x thickness onto a sensor wafer, executing layer transfer of the optical element by a DBH fusion bond technique to the sensor wafer whereby the first and second oxides form an oxide layer of n thickness between the optical element and the sensor wafer and removing the handle wafer.

公开(公告)号：US20220157881A1

公开(公告)日：2022-05-19

申请号：US16952783

申请日：2020-11-19

Applicant: RAYTHEON COMPANY

Inventor： Jamal I. Mustafa ,  Robert C. Anderson ,  John L. Vampola ,  Sean P. Kilcoyne ,  Eric R. Miller ,  George Grama

IPC: H01L27/146

Abstract: A direct-bond hybridization (DBH) method is provided to assemble a sensor wafer device. The DBH method includes fabricating an optical element on a handle wafer and depositing first oxide with n-x thickness on the optical element where n is an expected final oxide thickness of the sensor wafer, depositing second oxide with x thickness onto a sensor wafer, executing layer transfer of the optical element by a DBH fusion bond technique to the sensor wafer whereby the first and second oxides form an oxide layer of n thickness between the optical element and the sensor wafer and removing the handle wafer.