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公开(公告)号:US12071339B2
公开(公告)日:2024-08-27
申请号:US17294615
申请日:2019-12-13
Applicant: RF360 SINGAPORE PTE. LTD.
Inventor: Manuel Hofer , Rodrigo Pacher Fernandes , Stefan Leopold Hatzl , Josef Ehgartner , Peter Bainschab
CPC classification number: B81B7/0051 , B81C1/00269 , H03H3/007 , H03H9/171 , B81B2201/0271 , B81B2207/053 , B81C2203/0118 , B81C2203/037
Abstract: A wafer-level package for micro-acoustic devices and a method of manufacture is provided. The package comprises a base wafer with electric device structures. A frame structure is sitting on top of the base wafer enclosing particular device areas for the micro-acoustic devices. A cap wafer provided with a thin polymer coating is bonded to the frame structure to form a closed cavity over each device area and to enclose within the cavity the device structures arranged on the respective device area.
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公开(公告)号:US12261583B2
公开(公告)日:2025-03-25
申请号:US17649965
申请日:2022-02-04
Applicant: RF360 Singapore Pte. Ltd.
Inventor: Simone Colasanti , Nadine Erhard-Egeler , Stefan Leopold Hatzl , Manuel Hofer , Peter Kirchhofer , Volker Schulz
Abstract: A stacked AW filter package includes a first substrate stacked on a second substrate. The first substrate has a first AW filter circuit on first surface and a metal layer on a second surface. The second substrate has a second AW filter circuit disposed in a cavity between the metal layer of the first substrate and a third surface of the second substrate. The metal layer is coupled to the second AW filter circuit by a metal interconnect formed in a metallization layer on a side surface of the first substrate. The metal layer provides isolation to reduce cross-talk (e.g., electromagnetic interference) within the stacked AW filter package between the first AW filter circuit and the second AW filter circuit. Including the metal layer in the stacked AW filter package improves signal quality of transmitted and received signals filtered in the first and second AW filter circuits.
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