公开(公告)号：US20140110582A1

公开(公告)日：2014-04-24

申请号：US14145497

申请日：2013-12-31

Applicant: RUDOLPH TECHNOLOGIES, INC.

Inventor： David S. Marx ,  David L. Grant

IPC: G01B11/22

CPC classification number: G01B11/22 ,  G01B11/0633 ,  G01B11/0675 ,  G01B2210/56

Abstract: A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).

Abstract translation: 一种用于直接测量包括蚀刻表面（82）和非蚀刻表面（84）的晶片（80）上的高纵横比蚀刻特征的深度的系统（10）。 系统（10）利用红外反射计（12），在优选实施例中，扫描激光器（14），光纤循环器（16），光电检测器（22）和组合准直仪（18）和物镜（20） ）。 从物镜（20），产生被施加到晶片（80）的未蚀刻表面（84）的聚焦入射光（23）。 从晶片（80）产生的反射光（25）通过反射计（12）处理并被施加到产生相应的数字数据信号（29）的ADC（24）。 数字数据信号（29）被应用于与软件（32）组合的计算机（30），其测量在显示器（34）上被观看的蚀刻特征的深度。

公开(公告)号：US20150362314A1

公开(公告)日：2015-12-17

申请号：US14762613

申请日：2014-01-23

Applicant: RUDOLPH TECHNOLOGIES, INC.

Inventor： Rajiv Roy ,  David Grant ,  David S. Marx ,  Hanh Chu

IPC: G01B11/27

CPC classification number: G01B11/272 ,  G01B9/02044 ,  G01B9/0209 ,  G01N21/95692 ,  H01L22/12 ,  H01L2224/16 ,  H01L2924/15311

Abstract: A method for characterizing a microfabrication process and the product thereof is described. A substrate having TSV's formed therein is assessed by determining the geometries and positions of the top and bottom ends of a TSV. Individual TSV's as well as the entire pattern of TSV's formed in a substrate may be assessed.

Abstract translation: 描述微加工过程表征的方法及其产物。 通过确定TSV的顶端和底端的几何形状和位置来评估其中形成有TSV的衬底。 可以评估个体TSV以及在底物中形成的TSV的整个图案。

公开(公告)号：US09952041B2

公开(公告)日：2018-04-24

申请号：US14762613

申请日：2014-01-23

Applicant: Rudolph Technologies, Inc.

Inventor： Rajiv Roy ,  David Grant ,  David S. Marx ,  Hanh Chu

IPC: G01B11/02 ,  G01B11/27 ,  G01B9/02 ,  H01L21/66 ,  G01N21/956

CPC classification number: G01B11/272 ,  G01B9/02044 ,  G01B9/0209 ,  G01N21/95692 ,  H01L22/12 ,  H01L2224/16 ,  H01L2924/15311

Abstract: A method for characterizing a microfabrication process and the product thereof is described. A substrate having TSV's formed therein is assessed by determining the geometries and positions of the top and bottom ends of a TSV. Individual TSV's as well as the entire pattern of TSV's formed in a substrate may be assessed.

公开(公告)号：US09587932B2

公开(公告)日：2017-03-07

申请号：US15142864

申请日：2016-04-29

Applicant: Rudolph Technologies, Inc.

Inventor： David S. Marx ,  David L. Grant

IPC: G01N21/55 ,  G01B11/22 ,  G01B11/06

CPC classification number: G01B11/22 ,  G01B11/0633 ,  G01B11/0675 ,  G01B2210/56

Abstract: A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).

Abstract translation: 一种用于直接测量包括蚀刻表面（82）和非蚀刻表面（84）的晶片（80）上的高纵横比蚀刻特征的深度的系统（10）。 系统（10）利用红外反射计（12），在优选实施例中，扫描激光器（14），光纤循环器（16），光电检测器（22）和组合准直仪（18）和物镜（20） ）。 从物镜（20），产生被施加到晶片（80）的未蚀刻表面（84）的聚焦入射光（23）。 从晶片（80）产生的反射光（25）通过反射计（12）处理并被施加到产生相应的数字数据信号（29）的ADC（24）。 数字数据信号（29）被应用于与软件（32）组合的计算机（30），其测量在显示器（34）上被观看的蚀刻特征的深度。

公开(公告)号：US20160238378A1

公开(公告)日：2016-08-18

申请号：US15142864

申请日：2016-04-29

Applicant: Rudolph Technologies, Inc.

Inventor： David S. Marx ,  David L. Grant

IPC: G01B11/22 ,  G01B11/06

CPC classification number: G01B11/22 ,  G01B11/0633 ,  G01B11/0675 ,  G01B2210/56

Abstract: A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).

Abstract translation: 一种用于直接测量包括蚀刻表面（82）和非蚀刻表面（84）的晶片（80）上的高纵横比蚀刻特征的深度的系统（10）。 系统（10）利用红外反射计（12），在优选实施例中，扫描激光器（14），光纤循环器（16），光电检测器（22）和组合准直仪（18）和物镜（20） ）。 从物镜（20），产生被施加到晶片（80）的未蚀刻表面（84）的聚焦入射光（23）。 从晶片（80）产生的反射光（25）通过反射计（12）处理并被施加到产生相应的数字数据信号（29）的ADC（24）。 数字数据信号（29）被应用于与软件（32）组合的计算机（30），其测量在显示器（34）上被观看的蚀刻特征的深度。