公开(公告)号：US20040212435A1

公开(公告)日：2004-10-28

申请号：US10847877

申请日：2004-05-19

Applicant: Renesas Technology Corp.

Inventor： Satoshi Arai ,  Tsuyoshi Shibuya ,  Hitoshi Sekiguchi ,  Nobuhiro Matsudaira ,  Tomio Furuya ,  Masashi Maruyama ,  Yasushi Ohyama

IPC: H03G003/10

CPC classification number: H03G3/3047 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/19105 ,  H03G3/004 ,  H03G3/3042 ,  H01L2924/00014

Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.

Abstract translation: 本发明提供了一种开环型高频功率放大器，其基于用于输出的控制信号输出具有与每个输出功率FET的电源电压控制下所需的输出电平相对应的电平的信号 水平。 高频功率放大器设置有偏置电压发生电路，该偏置电压产生电路根据用于控制输出功率FET的电源电压的功率控制电路的输出电压，基于该控制来产生每个输出功率FET的栅极偏置电压 信号输出电平。