公开(公告)号：US20040212435A1

公开(公告)日：2004-10-28

申请号：US10847877

申请日：2004-05-19

Applicant: Renesas Technology Corp.

Inventor： Satoshi Arai ,  Tsuyoshi Shibuya ,  Hitoshi Sekiguchi ,  Nobuhiro Matsudaira ,  Tomio Furuya ,  Masashi Maruyama ,  Yasushi Ohyama

IPC: H03G003/10

CPC classification number: H03G3/3047 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/19105 ,  H03G3/004 ,  H03G3/3042 ,  H01L2924/00014

Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.

Abstract translation: 本发明提供了一种开环型高频功率放大器，其基于用于输出的控制信号输出具有与每个输出功率FET的电源电压控制下所需的输出电平相对应的电平的信号 水平。 高频功率放大器设置有偏置电压发生电路，该偏置电压产生电路根据用于控制输出功率FET的电源电压的功率控制电路的输出电压，基于该控制来产生每个输出功率FET的栅极偏置电压 信号输出电平。

公开(公告)号：US20040212436A1

公开(公告)日：2004-10-28

申请号：US10849852

申请日：2004-05-21

Applicant: Renesas Technology Corp. ,  Hitachi Communications Systems, Inc.

Inventor： Yoshikuni Matsunaga ,  Toshihiko Shimizu ,  Tomio Furuya ,  Nobuhiro Matsudaira ,  Koichi Matsushita

IPC: H03G003/10

CPC classification number: H03F1/0261 ,  H03F2200/465 ,  H03G1/0017 ,  H03G3/3042 ,  H03G3/3047

Abstract: A multistage high frequency power amplifier-circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.

Abstract translation: 多级高频功率放大器电路装置具有串联连接的多个半导体放大元件。 电路装置设置有偏置控制电路，用于控制各级输出半导体放大元件的偏置电压或偏置电流，以便减少相对于周围区域内的功率控制信号电压的输出功率的变化 半导体放大元件的阈值电压。 这实现了在使用诸如功率控制信号的这种控制电压实现的低功率输出时，输出功率具有优异的可控制性和高效率的高频功率放大器电路器件。

公开(公告)号：US20040164808A1

公开(公告)日：2004-08-26

申请号：US10785021

申请日：2004-02-25

Applicant: RENESAS TECHNOLOGY CORP. ,  HITACHI COMMUNICATION SYSTEMS, INC.

Inventor： Kouichi Matsushita ,  Tomio Furuya ,  Fuminori Morisawa ,  Takayuki Tsutsui ,  Nobuhiro Matsudaira

IPC: H03F003/68

CPC classification number: H03G3/3042 ,  H03F1/301

Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.

Abstract translation: 包括通过电阻分配器产生栅极偏置电压的偏置电路的模块产生一个问题，即构成偏置电路的电阻的值必须被微调，因此需要额外的修整任务。 本发明提供电流发生器，其响应于控制电压而产生电流变化，而不管晶体管阈值电压的变化，将输出电阻连接到各级的并联晶体管，以形成电流镜电路，并将电流从电流发生器提供给 驱动它们，而不是提供分压。