公开(公告)号：US20180351093A1

公开(公告)日：2018-12-06

申请号：US15611029

申请日：2017-06-01

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Ming-Che WU ,  Alvaro PADILLA ,  Tanmay KUMAR

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

CPC classification number: H01L45/1246 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0045 ,  H01L27/2454 ,  H01L27/2463 ,  H01L27/249 ,  H01L45/08 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1641

Abstract: A resistive memory device, such as a BMC ReRAM device, includes at least one resistive memory element which contains a carbon barrier material portion and a resistive memory material portion that is disposed between a first electrode and a second electrode.

公开(公告)号：US20170309324A1

公开(公告)日：2017-10-26

申请号：US15251818

申请日：2016-08-30

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Tanmay KUMAR ,  Alper ILKBAHAR

IPC: G11C11/4091 ,  G11C13/00

CPC classification number: G11C11/4091 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/003 ,  G11C13/0033 ,  G11C13/004 ,  G11C2013/0045 ,  G11C2213/15 ,  G11C2213/71 ,  H01L27/249 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/146

Abstract: A volatile resistive memory device includes a resistive memory element including a barrier material portion and a charge-modulated resistive memory material portion. The barrier material portion includes a material selected from germanium and a silicon-germanium alloy, and the charge-modulated resistive memory material portion includes a non-filamentary, electrically conductive metal oxide. The resistive memory device may be a volatile eDRAM device. In operation, reading a resistance state of the resistive memory element does not disturb the resistance state of the charge-modulated resistive memory material portion.

公开(公告)号：US20180197988A1

公开(公告)日：2018-07-12

申请号：US15400244

申请日：2017-01-06

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Perumal RATNAM ,  Christopher PETTI ,  Juan SAENZ ,  Guangle ZHOU ,  Abhijit BANDYOPADHYAY ,  Tanmay KUMAR

IPC: H01L29/78 ,  H01L29/423 ,  H01L23/528 ,  H01L27/24 ,  H01L29/66

CPC classification number: H01L29/7827 ,  H01L23/5283 ,  H01L27/2454 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/66666 ,  H01L29/78642 ,  H01L29/78648

Abstract: A matrix rail structure is formed over a substrate. The matrix rail structure includes a pair of lengthwise sidewalls that extend along a first horizontal direction and comprises, or is at least partially subsequently replaced with, a set of at least one gate electrode rail extending along the first horizontal direction and straight-sidewalled gate dielectrics. A pair of vertical semiconductor channel strips and a pair of laterally-undulating gate dielectrics can be formed on sidewalls of the matrix rail structure for each vertical field effect transistor. At least one laterally-undulating gate electrode extending along the first horizontal direction is formed on the laterally-undulating gate dielectrics. Bottom active regions and top active regions are formed at end portions of the vertical semiconductor channel strips. The vertical field effect transistors can be formed as a two-dimensional array, and may be employed as access transistors for a three-dimensional memory device.