Abstract:
A semiconductor device includes a plurality of column portions made of a semiconductor. The plurality of column portions each include a source region, a drain region, and a channel formation region including a channel formed between the source region and the drain region. The semiconductor device further includes: a gate electrode provided at a side wall of the channel formation region with an insulating layer being interposed between the gate electrode and the side wall; a first semiconductor layer coupled to either one of the source region and the drain region of each of the plurality of column portions; and a first metal layer coupled to the first semiconductor layer.
Abstract:
A timing signal generating device includes a GPS receiver and a processing unit. The GPS receiver functions as a positioning calculation unit, and receives satellite signals transmitted from GPS satellites and performs positioning calculation based on trajectory information and time information contained in the received satellite signals. Further, the processing unit functions as a position information generation unit, and generates position information of a receiving point based on a mode value or a median value in results of the positioning calculation at a plurality of times by the GPS receiver.
Abstract:
A timing signal generation device includes a GPS receiver, an atomic oscillator, a phase comparator, a loop filter, and a divider, a temperature sensor, a DDS, and a DSP. The GPS receiver outputs a reference timing signal. The atomic oscillator outputs a clock signal in accordance with an input voltage value. The phase comparator, the loop filter, and the divider adjust the voltage value in accordance with a synchronization status between the reference timing signal and the clock signal. The temperature sensor outputs a signal depending on the temperature of the atomic oscillator. The DDS converts the frequency of the clock signal and outputs a signal obtained by converting the frequency. The DSP controls the DDS based on an output of the temperature sensor.
Abstract:
A timing signal generation device includes: an output terminal that outputs a standard signal; a first standard signal generation unit that generates a first standard signal based on a reference signal input from outside; a second standard signal generation unit that generates a second standard signal based on a signal output from an oscillator; and a control unit that switches the standard signal output from the output terminal from the first standard signal to the second standard signal based on prior information indicating that accuracy of the reference signal deteriorates.
Abstract:
A timing signal generating device includes a GPS receiver and a processing unit. The GPS receiver functions as a positioning calculation unit, and receives satellite signals transmitted from GPS satellites and performs positioning calculation based on trajectory information and time information contained in the received satellite signals. Further, the processing unit functions as a position information generation unit, and generates position information of a receiving point based on a mode value or a median value in results of the positioning calculation at a plurality of times by the GPS receiver.
Abstract:
A light emitting apparatus includes a substrate, a laminated structure provided at the substrate and including a plurality of columnar sections, and an electrode provided on the side opposite the substrate with respect to the laminated structure and injecting current into the laminated structure. The columnar sections each include an n-type first GaN layer, a p-type second GaN layer, and a light emitting layer provided between the first GaN layer and the second GaN layer. The first GaN layers are provided between the light emitting layers and the substrate. The laminated structure includes a p-type first AlGaN layer. The first AlGaN layer includes a first section provided between the second GaN layers of the columnar sections adjacent to each other and a second section provided between the first section and the electrode and between the columnar sections and the electrode.
Abstract:
A light emitting apparatus includes an electrode and a laminated structure. The laminated structure includes an n-type first semiconductor layer, a light emitting layer, a p-type second semiconductor layer, a tunnel junction layer, and an n-type third semiconductor layer. The electrode is electrically connected to the first semiconductor layer. The first semiconductor layer, the light emitting layer, the second semiconductor layer, the tunnel junction layer, and the third semiconductor layer are arranged in a presented order. The light emitting layer and the first semiconductor layer form a columnar section.
Abstract:
A timing signal generation device includes a GPS receiver that performs a positioning calculation based on a satellite signal; and a digital signal processor that generates position information regarding a reception point based on a value present within a range of A±σ/4 wherein A is a most frequent value or a median value of a plurality of positioning calculation results of the GPS receiver and σ is a standard deviation of the plurality of positioning calculation results. A timing signal is generated based on the satellite signal from at least one position information satellite and the position information regarding the reception point.
Abstract:
A timing signal generation device includes a PLL circuit that synchronizes a first clock signal of an atomic oscillator with a reference timing signal of a GPS receiver, a PLL circuit that synchronizes a second clock signal of an oven-controlled crystal oscillator with the first clock signal, a first count reset unit that enables resetting of a count value of a divider in the PLL circuit when an operation of the PLL circuit is restarted, and a second count reset unit that enables resetting of a count value of a divider in the PLL circuit when the operation of the PLL circuit is restarted.
Abstract:
A method for manufacturing a resistive element includes: preparing a substrate including an n-type silicon layer; doping the silicon layer with an impurity to thereby form a resistive region; heat-treating the resistive region by any of rapid thermal annealing, flash lamp annealing, and excimer laser annealing; and epitaxially growing silicon on the resistive region to thereby form a covering layer.