公开(公告)号：US20240072142A1

公开(公告)日：2024-02-29

申请号：US18218751

申请日：2023-07-06

Applicant: SEMES CO., LTD.

Inventor： Thomas Jongwan KWON ,  Hae-won CHOI ,  Yunsang KIM

IPC: H01L29/423 ,  H01L21/3213

CPC classification number: H01L29/4236 ,  H01L21/32137

Abstract: Provided is a method of manufacturing a semiconductor device, the method including steps of providing a semiconductor substrate having one or more trenches, forming a gate insulating layer on the semiconductor substrate inside the trenches, and forming a buried gate electrode layer on the gate insulating layer to at least partially fill the trenches, wherein the step of forming the buried gate electrode layer includes a step of repeating a unit cycle a plurality of times, the unit cycle including an atomic layer deposition (ALD) process for forming a conductive layer on the gate insulating layer to serve as the buried gate electrode layer, and an atomic layer etching (ALE) process for preferentially etching portions of the conductive layer formed near the trenches and portions of the conductive layer formed on upper ends of the trenches over other portions of the conductive layer inside the trenches.

公开(公告)号：US20240006160A1

公开(公告)日：2024-01-04

申请号：US18142442

申请日：2023-05-02

Applicant: SEMES CO., LTD.

Inventor： Kwangryul KIM ,  Yunsang KIM

IPC: H01J37/32 ,  B23K26/352

CPC classification number: H01J37/32449 ,  H01J37/32568 ,  H01J37/32082 ,  B23K26/352 ,  H01J2237/002 ,  H01J2237/334

Abstract: Provided is a substrate processing apparatus including a chamber including a processing space; a support table provided within the processing space of the chamber and configured to support a substrate; a dielectric plate covering an opening in an upper wall of the chamber; a transparent electrode provided on the dielectric plate; a laser supply head configured to supply a laser beam toward the substrate supported on the support table via the transparent electrode and the dielectric plate; and a cooling device configured to cool the transparent electrode by injecting a cooling gas toward the transparent electrode.

公开(公告)号：US20240006167A1

公开(公告)日：2024-01-04

申请号：US18213863

申请日：2023-06-25

Applicant: SEMES CO., LTD.

Inventor： Kwang Ryul KIM ,  Yunsang KIM

IPC: H01J37/32 ,  H01J37/22 ,  H01L21/67 ,  C23C16/455 ,  C23C16/48

CPC classification number: H01J37/32724 ,  H01J37/22 ,  H01L21/67115 ,  C23C16/45544 ,  C23C16/483

Abstract: Provided is a substrate processing module including a plurality of substrate processing apparatuses each including a process chamber having a processing space therein, a support unit for supporting a substrate in the processing space, a gas supply unit for supplying a process gas into the processing space, a plasma source for forming plasma from the process gas supplied into the processing space, and a laser unit for heating the substrate by irradiating a laser beam onto the substrate, wherein the substrate processing module further includes a laser beam generator for generating a laser beam, and a laser beam distribution unit for receiving the laser beam from the laser beam generator and distributing the laser beam to the laser units of the plurality of substrate processing apparatuses at time intervals.